Fast electronic resistance switching involving hidden charge density wave states

Fast electronic resistance switching involving hidden charge density wave states

The control of a material's state via external stimuli is the basis of modern information storage technology. Here, the authors use pulsed currents to induce fast switching between Mott insulator and metallic states in the charge density wave system 1T-TaS2, presenting an all-electronic storage...

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Autores principales: I. Vaskivskyi, I. A. Mihailovic, S. Brazovskii, J. Gospodaric, T. Mertelj, D. Svetin, P. Sutar, D. Mihailovic
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Science
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Acceso en línea:https://doaj.org/article/341d8c6042c041ef967e900007d5685c
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