Fast electronic resistance switching involving hidden charge density wave states
The control of a material's state via external stimuli is the basis of modern information storage technology. Here, the authors use pulsed currents to induce fast switching between Mott insulator and metallic states in the charge density wave system 1T-TaS2, presenting an all-electronic storage...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/341d8c6042c041ef967e900007d5685c |
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