Interface induced diffusion

Abstract Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defe...

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Autores principales:	S. Gurbán, A. Sulyok, Miklos Menyhárd, E. Baradács, B. Parditka, C. Cserháti, G. A. Langer, Z. Erdélyi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3545bf594a86481da63fdb6c61cf15f2
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spelling	oai:doaj.org-article:3545bf594a86481da63fdb6c61cf15f22021-12-02T13:41:23ZInterface induced diffusion10.1038/s41598-021-88808-12045-2322https://doaj.org/article/3545bf594a86481da63fdb6c61cf15f22021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-88808-1https://doaj.org/toc/2045-2322Abstract Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, was different in the vicinity of the interface and in the "bulk" parts of the Al2O3 layer. This difference creates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3/Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx + Si (at 500 °C), Al2O3 + Si (at 700 °C), as the temperature during irradiation varies. Utilizing this finding it is possible to produce area selective interface patterning.S. GurbánA. SulyokMiklos MenyhárdE. BaradácsB. ParditkaC. CserhátiG. A. LangerZ. ErdélyiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q S. Gurbán A. Sulyok Miklos Menyhárd E. Baradács B. Parditka C. Cserháti G. A. Langer Z. Erdélyi Interface induced diffusion
description	Abstract Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, was different in the vicinity of the interface and in the "bulk" parts of the Al2O3 layer. This difference creates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3/Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx + Si (at 500 °C), Al2O3 + Si (at 700 °C), as the temperature during irradiation varies. Utilizing this finding it is possible to produce area selective interface patterning.
format	article
author	S. Gurbán A. Sulyok Miklos Menyhárd E. Baradács B. Parditka C. Cserháti G. A. Langer Z. Erdélyi
author_facet	S. Gurbán A. Sulyok Miklos Menyhárd E. Baradács B. Parditka C. Cserháti G. A. Langer Z. Erdélyi
author_sort	S. Gurbán
title	Interface induced diffusion
title_short	Interface induced diffusion
title_full	Interface induced diffusion
title_fullStr	Interface induced diffusion
title_full_unstemmed	Interface induced diffusion
title_sort	interface induced diffusion
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3545bf594a86481da63fdb6c61cf15f2
work_keys_str_mv	AT sgurban interfaceinduceddiffusion AT asulyok interfaceinduceddiffusion AT miklosmenyhard interfaceinduceddiffusion AT ebaradacs interfaceinduceddiffusion AT bparditka interfaceinduceddiffusion AT ccserhati interfaceinduceddiffusion AT galanger interfaceinduceddiffusion AT zerdelyi interfaceinduceddiffusion
_version_	1718392548832051200

Interface induced diffusion

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