Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires

Abstract Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is o...

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Autores principales:	Roman M. Balagula, Mattias Jansson, Mitsuki Yukimune, Jan E. Stehr, Fumitaro Ishikawa, Weimin M. Chen, Irina A. Buyanova
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/35933a028013431090ad5fd2aaafda75
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spelling	oai:doaj.org-article:35933a028013431090ad5fd2aaafda752021-12-02T14:59:09ZEffects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires10.1038/s41598-020-64958-62045-2322https://doaj.org/article/35933a028013431090ad5fd2aaafda752020-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-64958-6https://doaj.org/toc/2045-2322Abstract Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often involved during device fabrication and can also be used to improve their optical and transport properties. However, effects of such annealing on alloy disorder and strain in core/shell NWs are not fully understood. In this work we investigate these effects in novel core/shell/shell GaAs/GaNAs/GaAs NWs grown by molecular beam epitaxy on (111) Si substrates. By employing polarization-resolved photoluminescence measurements, we show that annealing (i) improves overall alloy uniformity due to suppressed long-range fluctuations in the N composition; (ii) reduces local strain within N clusters acting as quantum dot emitters; and (iii) leads to partial relaxation of the global strain caused by the lattice mismatch between GaNAs and GaAs. Our results, therefore, underline applicability of such treatment for improving optical quality of NWs from highly-mismatched alloys. They also call for caution when using ex-situ annealing in strain-engineered NW heterostructures.Roman M. BalagulaMattias JanssonMitsuki YukimuneJan E. StehrFumitaro IshikawaWeimin M. ChenIrina A. BuyanovaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Roman M. Balagula Mattias Jansson Mitsuki Yukimune Jan E. Stehr Fumitaro Ishikawa Weimin M. Chen Irina A. Buyanova Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
description	Abstract Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often involved during device fabrication and can also be used to improve their optical and transport properties. However, effects of such annealing on alloy disorder and strain in core/shell NWs are not fully understood. In this work we investigate these effects in novel core/shell/shell GaAs/GaNAs/GaAs NWs grown by molecular beam epitaxy on (111) Si substrates. By employing polarization-resolved photoluminescence measurements, we show that annealing (i) improves overall alloy uniformity due to suppressed long-range fluctuations in the N composition; (ii) reduces local strain within N clusters acting as quantum dot emitters; and (iii) leads to partial relaxation of the global strain caused by the lattice mismatch between GaNAs and GaAs. Our results, therefore, underline applicability of such treatment for improving optical quality of NWs from highly-mismatched alloys. They also call for caution when using ex-situ annealing in strain-engineered NW heterostructures.
format	article
author	Roman M. Balagula Mattias Jansson Mitsuki Yukimune Jan E. Stehr Fumitaro Ishikawa Weimin M. Chen Irina A. Buyanova
author_facet	Roman M. Balagula Mattias Jansson Mitsuki Yukimune Jan E. Stehr Fumitaro Ishikawa Weimin M. Chen Irina A. Buyanova
author_sort	Roman M. Balagula
title	Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
title_short	Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
title_full	Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
title_fullStr	Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
title_full_unstemmed	Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
title_sort	effects of thermal annealing on localization and strain in core/multishell gaas/ganas/gaas nanowires
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/35933a028013431090ad5fd2aaafda75
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Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires

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