Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to pr...
Guardado en:
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| id |
oai:doaj.org-article:362d5c3672b344629959f2ae3d9e6b1c |
|---|---|
| record_format |
dspace |
| spelling |
oai:doaj.org-article:362d5c3672b344629959f2ae3d9e6b1c2021-11-19T00:01:28ZNormally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region2168-673410.1109/JEDS.2020.2975620https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c2020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9006881/https://doaj.org/toc/2168-6734Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to prevent further oxidizing of the underlying AlGaN barrier layer, and to ensure that the low-resistive p-GaN layer in the access region was fully oxidized. Relative to conventional p-GaN gated AlGaN/GaN HEMTs, these AlGaN/GaN HEMTs with HR-GaN layers achieved a lower drain leakage current of 4.4 <inline-formula> <tex-math notation="LaTeX">$\times 10^{-7}$ </tex-math></inline-formula> mA/mm, a higher drain current on/off ratio of 3.9 <inline-formula> <tex-math notation="LaTeX">$\times 10^{9}$ </tex-math></inline-formula>, a lower on-state resistance of 17.1 <inline-formula> <tex-math notation="LaTeX">${\Omega }\cdot $ </tex-math></inline-formula>mm, and less current collapse.Xinke LiuHsien-Chin ChiuChia-Hao LiuHsuan-Ling KaoChao-Wei ChiuHsiang-Chun WangJianwei BenWei HeChong-Rong HuangIEEEarticlep-GaN gate HEMTnormally-offhigh-resistivity GaNElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 8, Pp 229-234 (2020) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
p-GaN gate HEMT normally-off high-resistivity GaN Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
| spellingShingle |
p-GaN gate HEMT normally-off high-resistivity GaN Electrical engineering. Electronics. Nuclear engineering TK1-9971 Xinke Liu Hsien-Chin Chiu Chia-Hao Liu Hsuan-Ling Kao Chao-Wei Chiu Hsiang-Chun Wang Jianwei Ben Wei He Chong-Rong Huang Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
| description |
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to prevent further oxidizing of the underlying AlGaN barrier layer, and to ensure that the low-resistive p-GaN layer in the access region was fully oxidized. Relative to conventional p-GaN gated AlGaN/GaN HEMTs, these AlGaN/GaN HEMTs with HR-GaN layers achieved a lower drain leakage current of 4.4 <inline-formula> <tex-math notation="LaTeX">$\times 10^{-7}$ </tex-math></inline-formula> mA/mm, a higher drain current on/off ratio of 3.9 <inline-formula> <tex-math notation="LaTeX">$\times 10^{9}$ </tex-math></inline-formula>, a lower on-state resistance of 17.1 <inline-formula> <tex-math notation="LaTeX">${\Omega }\cdot $ </tex-math></inline-formula>mm, and less current collapse. |
| format |
article |
| author |
Xinke Liu Hsien-Chin Chiu Chia-Hao Liu Hsuan-Ling Kao Chao-Wei Chiu Hsiang-Chun Wang Jianwei Ben Wei He Chong-Rong Huang |
| author_facet |
Xinke Liu Hsien-Chin Chiu Chia-Hao Liu Hsuan-Ling Kao Chao-Wei Chiu Hsiang-Chun Wang Jianwei Ben Wei He Chong-Rong Huang |
| author_sort |
Xinke Liu |
| title |
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
| title_short |
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
| title_full |
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
| title_fullStr |
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
| title_full_unstemmed |
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region |
| title_sort |
normally-off p-gan gated algan/gan hemts using plasma oxidation technique in access region |
| publisher |
IEEE |
| publishDate |
2020 |
| url |
https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c |
| work_keys_str_mv |
AT xinkeliu normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT hsienchinchiu normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT chiahaoliu normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT hsuanlingkao normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT chaoweichiu normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT hsiangchunwang normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT jianweiben normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT weihe normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion AT chongronghuang normallyoffpgangatedalganganhemtsusingplasmaoxidationtechniqueinaccessregion |
| _version_ |
1718420662087843840 |