Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to pr...
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Autores principales: | Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
IEEE
2020
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Materias: | |
Acceso en línea: | https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c |
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