Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to pr...

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Bibliographic Details
Main Authors: Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang
Format: article
Language:EN
Published: IEEE 2020
Subjects:
p-GaN gate HEMT
normally-off
high-resistivity GaN
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Online Access:https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c
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https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c

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