A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-ga...

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Autores principales:	Badri Khvitia, Anna Gheonjian, Zviadi Kutchadze, Roman Jobava
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	electric/hybrid vehicle EMC simulations IGBT MOSFET SPICE models Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/364128d9d69e44d998470f17b438dea7
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id	oai:doaj.org-article:364128d9d69e44d998470f17b438dea7
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spelling	oai:doaj.org-article:364128d9d69e44d998470f17b438dea72021-11-25T17:24:57ZA SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems10.3390/electronics102228222079-9292https://doaj.org/article/364128d9d69e44d998470f17b438dea72021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2822https://doaj.org/toc/2079-9292We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semiconductor field-effect transistor (MOSFET) in the IGBT is used to simplify this IGBT model. The second simpler behavioral model could be used to model both IGBTs and MOSFETs. Model parameters are obtained from datasheets and then adjusted using results from a single measurement test. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs. To check the validation of the models, a brushless DC electric motor test setup with an inverter was created. Despite the simplicity of the presented models, a comparison of model predictions with hardware measurements revealed that the model accurately forecasted switch transients and aided EMI–EMC investigations.Badri KhvitiaAnna GheonjianZviadi KutchadzeRoman JobavaMDPI AGarticleelectric/hybrid vehicleEMC simulationsIGBTMOSFET SPICE modelsElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2822, p 2822 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	electric/hybrid vehicle EMC simulations IGBT MOSFET SPICE models Electronics TK7800-8360
spellingShingle	electric/hybrid vehicle EMC simulations IGBT MOSFET SPICE models Electronics TK7800-8360 Badri Khvitia Anna Gheonjian Zviadi Kutchadze Roman Jobava A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
description	We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semiconductor field-effect transistor (MOSFET) in the IGBT is used to simplify this IGBT model. The second simpler behavioral model could be used to model both IGBTs and MOSFETs. Model parameters are obtained from datasheets and then adjusted using results from a single measurement test. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs. To check the validation of the models, a brushless DC electric motor test setup with an inverter was created. Despite the simplicity of the presented models, a comparison of model predictions with hardware measurements revealed that the model accurately forecasted switch transients and aided EMI–EMC investigations.
format	article
author	Badri Khvitia Anna Gheonjian Zviadi Kutchadze Roman Jobava
author_facet	Badri Khvitia Anna Gheonjian Zviadi Kutchadze Roman Jobava
author_sort	Badri Khvitia
title	A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
title_short	A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
title_full	A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
title_fullStr	A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
title_full_unstemmed	A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
title_sort	spice model for igbts and power mosfets focusing on emi/emc in high-voltage systems
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/364128d9d69e44d998470f17b438dea7
work_keys_str_mv	AT badrikhvitia aspicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT annagheonjian aspicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT zviadikutchadze aspicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT romanjobava aspicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT badrikhvitia spicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT annagheonjian spicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT zviadikutchadze spicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems AT romanjobava spicemodelforigbtsandpowermosfetsfocusingonemiemcinhighvoltagesystems
_version_	1718412401510973440

A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

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