A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-ga...

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Autores principales: Badri Khvitia, Anna Gheonjian, Zviadi Kutchadze, Roman Jobava
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/364128d9d69e44d998470f17b438dea7
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