Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the...

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Autores principales: Wen-ning Ren, Kui-juan Jin, Jie-su Wang, Chen Ge, Er-Jia Guo, Cheng Ma, Can Wang, Xiulai Xu
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Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/3716ede14f8c4405b362187ab26bf2c5
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spelling oai:doaj.org-article:3716ede14f8c4405b362187ab26bf2c52021-12-02T14:06:50ZTunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te610.1038/s41598-021-82394-y2045-2322https://doaj.org/article/3716ede14f8c4405b362187ab26bf2c52021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-82394-yhttps://doaj.org/toc/2045-2322Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr2Ge2Te6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr2Ge2Te6. These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.Wen-ning RenKui-juan JinJie-su WangChen GeEr-Jia GuoCheng MaCan WangXiulai XuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Wen-ning Ren
Kui-juan Jin
Jie-su Wang
Chen Ge
Er-Jia Guo
Cheng Ma
Can Wang
Xiulai Xu
Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
description Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr2Ge2Te6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr2Ge2Te6. These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.
format article
author Wen-ning Ren
Kui-juan Jin
Jie-su Wang
Chen Ge
Er-Jia Guo
Cheng Ma
Can Wang
Xiulai Xu
author_facet Wen-ning Ren
Kui-juan Jin
Jie-su Wang
Chen Ge
Er-Jia Guo
Cheng Ma
Can Wang
Xiulai Xu
author_sort Wen-ning Ren
title Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_short Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_full Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_fullStr Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_full_unstemmed Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_sort tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor cr2ge2te6
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/3716ede14f8c4405b362187ab26bf2c5
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