Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the...

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Autores principales:	Wen-ning Ren, Kui-juan Jin, Jie-su Wang, Chen Ge, Er-Jia Guo, Cheng Ma, Can Wang, Xiulai Xu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3716ede14f8c4405b362187ab26bf2c5
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spelling	oai:doaj.org-article:3716ede14f8c4405b362187ab26bf2c52021-12-02T14:06:50ZTunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te610.1038/s41598-021-82394-y2045-2322https://doaj.org/article/3716ede14f8c4405b362187ab26bf2c52021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-82394-yhttps://doaj.org/toc/2045-2322Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr2Ge2Te6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr2Ge2Te6. These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.Wen-ning RenKui-juan JinJie-su WangChen GeEr-Jia GuoCheng MaCan WangXiulai XuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Wen-ning Ren Kui-juan Jin Jie-su Wang Chen Ge Er-Jia Guo Cheng Ma Can Wang Xiulai Xu Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
description	Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr2Ge2Te6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr2Ge2Te6. These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.
format	article
author	Wen-ning Ren Kui-juan Jin Jie-su Wang Chen Ge Er-Jia Guo Cheng Ma Can Wang Xiulai Xu
author_facet	Wen-ning Ren Kui-juan Jin Jie-su Wang Chen Ge Er-Jia Guo Cheng Ma Can Wang Xiulai Xu
author_sort	Wen-ning Ren
title	Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_short	Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_full	Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_fullStr	Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_full_unstemmed	Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6
title_sort	tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor cr2ge2te6
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3716ede14f8c4405b362187ab26bf2c5
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_version_	1718391955074842624

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

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