Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 10<sup>16</sup> 1 MeV n<sub>eq</sub>/cm<sup>2</sup> in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of t...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/372f006d7ac5498ba46dcfc7287c18c7 |
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| Sumario: | The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 10<sup>16</sup> 1 MeV n<sub>eq</sub>/cm<sup>2</sup> in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 10<sup>4</sup> ohm·cm) silicon material. |
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