Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of t...

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Autores principales:	Manwen Liu, Xinqing Li, Wenzheng Cheng, Zheng Li, Zhihua Li
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	ultra-fast 3D-trench electrode silicon detector full depletion voltage breakdown voltage leakage current capacitance weighting field Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/372f006d7ac5498ba46dcfc7287c18c7
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spelling	oai:doaj.org-article:372f006d7ac5498ba46dcfc7287c18c72021-11-25T18:23:42ZRadiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate10.3390/mi121114002072-666Xhttps://doaj.org/article/372f006d7ac5498ba46dcfc7287c18c72021-11-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1400https://doaj.org/toc/2072-666XThe radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 10<sup>16</sup> 1 MeV n<sub>eq</sub>/cm<sup>2</sup> in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 10<sup>4</sup> ohm·cm) silicon material.Manwen LiuXinqing LiWenzheng ChengZheng LiZhihua LiMDPI AGarticleultra-fast 3D-trench electrode silicon detectorfull depletion voltagebreakdown voltageleakage currentcapacitanceweighting fieldMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1400, p 1400 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ultra-fast 3D-trench electrode silicon detector full depletion voltage breakdown voltage leakage current capacitance weighting field Mechanical engineering and machinery TJ1-1570
spellingShingle	ultra-fast 3D-trench electrode silicon detector full depletion voltage breakdown voltage leakage current capacitance weighting field Mechanical engineering and machinery TJ1-1570 Manwen Liu Xinqing Li Wenzheng Cheng Zheng Li Zhihua Li Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
description	The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 10<sup>16</sup> 1 MeV n<sub>eq</sub>/cm<sup>2</sup> in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 10<sup>4</sup> ohm·cm) silicon material.
format	article
author	Manwen Liu Xinqing Li Wenzheng Cheng Zheng Li Zhihua Li
author_facet	Manwen Liu Xinqing Li Wenzheng Cheng Zheng Li Zhihua Li
author_sort	Manwen Liu
title	Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
title_short	Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
title_full	Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
title_fullStr	Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
title_full_unstemmed	Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate
title_sort	radiation hardness property of ultra-fast 3d-trench electrode silicon detector on n-type substrate
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/372f006d7ac5498ba46dcfc7287c18c7
work_keys_str_mv	AT manwenliu radiationhardnesspropertyofultrafast3dtrenchelectrodesilicondetectoronntypesubstrate AT xinqingli radiationhardnesspropertyofultrafast3dtrenchelectrodesilicondetectoronntypesubstrate AT wenzhengcheng radiationhardnesspropertyofultrafast3dtrenchelectrodesilicondetectoronntypesubstrate AT zhengli radiationhardnesspropertyofultrafast3dtrenchelectrodesilicondetectoronntypesubstrate AT zhihuali radiationhardnesspropertyofultrafast3dtrenchelectrodesilicondetectoronntypesubstrate
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Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

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