High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/37472269ba434363b6d7bfc0b2128e98 |
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| Sumario: | Multiexcitation of phosphors, additional scattering layer around the chip and special re-
flecting medium were proposed to improve the luminous efficiency and color properties of
LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show
better quantum yield of green and red phosphors, higher total brightness, and improved color
rendering index.
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