High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation

Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed...

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Autor principal:	Nazarov, Mihail
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/37472269ba434363b6d7bfc0b2128e98
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spelling	oai:doaj.org-article:37472269ba434363b6d7bfc0b2128e982021-11-21T12:07:44ZHigh efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation 2537-63651810-648Xhttps://doaj.org/article/37472269ba434363b6d7bfc0b2128e982008-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3785https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show better quantum yield of green and red phosphors, higher total brightness, and improved color rendering index. Nazarov, MihailD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 1, Pp 86-95 (2008)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Nazarov, Mihail High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
description	Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show better quantum yield of green and red phosphors, higher total brightness, and improved color rendering index.
format	article
author	Nazarov, Mihail
author_facet	Nazarov, Mihail
author_sort	Nazarov, Mihail
title	High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
title_short	High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
title_full	High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
title_fullStr	High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
title_full_unstemmed	High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
title_sort	high efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2008
url	https://doaj.org/article/37472269ba434363b6d7bfc0b2128e98
work_keys_str_mv	AT nazarovmihail highefficientlightemittingdeviceswithadditionascatteringlayerandreflectingmediumforwhiteliggeneration
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High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation

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