High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed...
Guardado en:
Autor principal: | |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
|
Materias: | |
Acceso en línea: | https://doaj.org/article/37472269ba434363b6d7bfc0b2128e98 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sea el primero en dejar un comentario!