High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation
Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed...
Enregistré dans:
Auteur principal: | |
---|---|
Format: | article |
Langue: | EN |
Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/37472269ba434363b6d7bfc0b2128e98 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|