32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underw...

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Autores principales:	Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha, Joon Seop Kwak
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	micro light-emitting diodes (μ-LEDs) high electron mobility transistor (HEMT) flip-chip solder bump bonding μ-LED arrays Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/37a2f66bd3d749fab9ac74b118c5398b
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spelling	oai:doaj.org-article:37a2f66bd3d749fab9ac74b118c5398b2021-11-25T18:31:58Z32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication10.3390/nano111130452079-4991https://doaj.org/article/37a2f66bd3d749fab9ac74b118c5398b2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3045https://doaj.org/toc/2079-4991This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power μ-LED-on-HEMT arrays that consist of 32 × 32 pixelated μ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the μ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are −4.6 V, <~1.1 × 10<sup>−9</sup> A at gate-to-source voltage (<i>V<sub>GS</sub></i>) = −10 V, and 21 mA at <i>V<sub>GS</sub></i> = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of μ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated μ-LED-on-HEMT arrays increases from 0 to ~4 mW as the <i>V<sub>GS</sub></i> increases from −6 to 4 V at <i>V<sub>DD</sub></i> = 10 V. Each pixel of the integrated μ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.Tae Kyoung KimAbu Bashar Mohammad Hamidul IslamYu-Jung ChaJoon Seop KwakMDPI AGarticlemicro light-emitting diodes (μ-LEDs)high electron mobility transistor (HEMT)flip-chipsolder bump bondingμ-LED arraysChemistryQD1-999ENNanomaterials, Vol 11, Iss 3045, p 3045 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	micro light-emitting diodes (μ-LEDs) high electron mobility transistor (HEMT) flip-chip solder bump bonding μ-LED arrays Chemistry QD1-999
spellingShingle	micro light-emitting diodes (μ-LEDs) high electron mobility transistor (HEMT) flip-chip solder bump bonding μ-LED arrays Chemistry QD1-999 Tae Kyoung Kim Abu Bashar Mohammad Hamidul Islam Yu-Jung Cha Joon Seop Kwak 32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
description	This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power μ-LED-on-HEMT arrays that consist of 32 × 32 pixelated μ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the μ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are −4.6 V, <~1.1 × 10<sup>−9</sup> A at gate-to-source voltage (<i>V<sub>GS</sub></i>) = −10 V, and 21 mA at <i>V<sub>GS</sub></i> = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of μ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated μ-LED-on-HEMT arrays increases from 0 to ~4 mW as the <i>V<sub>GS</sub></i> increases from −6 to 4 V at <i>V<sub>DD</sub></i> = 10 V. Each pixel of the integrated μ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.
format	article
author	Tae Kyoung Kim Abu Bashar Mohammad Hamidul Islam Yu-Jung Cha Joon Seop Kwak
author_facet	Tae Kyoung Kim Abu Bashar Mohammad Hamidul Islam Yu-Jung Cha Joon Seop Kwak
author_sort	Tae Kyoung Kim
title	32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
title_short	32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
title_full	32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
title_fullStr	32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
title_full_unstemmed	32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
title_sort	32 × 32 pixelated high-power flip-chip blue micro-led-on-hfet arrays for submarine optical communication
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/37a2f66bd3d749fab9ac74b118c5398b
work_keys_str_mv	AT taekyoungkim 3232pixelatedhighpowerflipchipbluemicroledonhfetarraysforsubmarineopticalcommunication AT abubasharmohammadhamidulislam 3232pixelatedhighpowerflipchipbluemicroledonhfetarraysforsubmarineopticalcommunication AT yujungcha 3232pixelatedhighpowerflipchipbluemicroledonhfetarraysforsubmarineopticalcommunication AT joonseopkwak 3232pixelatedhighpowerflipchipbluemicroledonhfetarraysforsubmarineopticalcommunication
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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

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