Preparation and photoluminescence of ZnGa2O4:Co

Ceramic samples of ZnGa2O4 doped with Co have been prepared. Their photolumines- cence spectra measured at laser excitation (λ= 351 nm) and various temperatures (10 – 300 K) contain a wide band, centered at 2.8 eV (10 K) with its halfwidth ~ 0.5 eV, induced by the recombination of donor-acceptor...

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Autores principales:	Jitari, Vasile, Ursachi, Veaceslav, Volodina, Galina, Şemeacova, Tatiana, Muntean, Ştefan
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/37b812605cba4dec9088660099e8ca47
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spelling	oai:doaj.org-article:37b812605cba4dec9088660099e8ca472021-11-21T12:08:22ZPreparation and photoluminescence of ZnGa2O4:Co 2537-63651810-648Xhttps://doaj.org/article/37b812605cba4dec9088660099e8ca472007-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3737https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Ceramic samples of ZnGa2O4 doped with Co have been prepared. Their photolumines- cence spectra measured at laser excitation (λ= 351 nm) and various temperatures (10 – 300 K) contain a wide band, centered at 2.8 eV (10 K) with its halfwidth ~ 0.5 eV, induced by the recombination of donor-acceptor pairs. The subsequent thermal annealing leads to its concentration quenching. Jitari, VasileUrsachi, VeaceslavVolodina, GalinaŞemeacova, TatianaMuntean, ŞtefanD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 2, Pp 261-263 (2007)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Jitari, Vasile Ursachi, Veaceslav Volodina, Galina Şemeacova, Tatiana Muntean, Ştefan Preparation and photoluminescence of ZnGa2O4:Co
description	Ceramic samples of ZnGa2O4 doped with Co have been prepared. Their photolumines- cence spectra measured at laser excitation (λ= 351 nm) and various temperatures (10 – 300 K) contain a wide band, centered at 2.8 eV (10 K) with its halfwidth ~ 0.5 eV, induced by the recombination of donor-acceptor pairs. The subsequent thermal annealing leads to its concentration quenching.
format	article
author	Jitari, Vasile Ursachi, Veaceslav Volodina, Galina Şemeacova, Tatiana Muntean, Ştefan
author_facet	Jitari, Vasile Ursachi, Veaceslav Volodina, Galina Şemeacova, Tatiana Muntean, Ştefan
author_sort	Jitari, Vasile
title	Preparation and photoluminescence of ZnGa2O4:Co
title_short	Preparation and photoluminescence of ZnGa2O4:Co
title_full	Preparation and photoluminescence of ZnGa2O4:Co
title_fullStr	Preparation and photoluminescence of ZnGa2O4:Co
title_full_unstemmed	Preparation and photoluminescence of ZnGa2O4:Co
title_sort	preparation and photoluminescence of znga2o4:co
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2007
url	https://doaj.org/article/37b812605cba4dec9088660099e8ca47
work_keys_str_mv	AT jitarivasile preparationandphotoluminescenceofznga2o4co AT ursachiveaceslav preparationandphotoluminescenceofznga2o4co AT volodinagalina preparationandphotoluminescenceofznga2o4co AT semeacovatatiana preparationandphotoluminescenceofznga2o4co AT munteanstefan preparationandphotoluminescenceofznga2o4co
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Preparation and photoluminescence of ZnGa2O4:Co

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