Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs

Abstract We propose a novel technique of dimensional engineering to realize low dimensional topological insulator from a trivial three dimensional parent. This is achieved by confining the bulk system to one dimension along a particular crystal direction, thus enhancing the quantum confinement effec...

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Autores principales:	Raghottam M. Sattigeri, Prafulla K. Jha
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/37d2cc7ab3f74b508a00d14540f1b0a8
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spelling	oai:doaj.org-article:37d2cc7ab3f74b508a00d14540f1b0a82021-12-02T16:31:10ZDimensional engineering of a topological insulating phase in Half-Heusler LiMgAs10.1038/s41598-021-85806-12045-2322https://doaj.org/article/37d2cc7ab3f74b508a00d14540f1b0a82021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85806-1https://doaj.org/toc/2045-2322Abstract We propose a novel technique of dimensional engineering to realize low dimensional topological insulator from a trivial three dimensional parent. This is achieved by confining the bulk system to one dimension along a particular crystal direction, thus enhancing the quantum confinement effects in the system. We investigate this mechanism in the Half-Heusler compound LiMgAs with face-centered cubic (FCC) structure. At ambient conditions the bulk FCC structure exhibits a semi-conducting nature. But, under the influence of high volume expansive pressure (VEP) the system undergoes a topological phase transition (TPT) from semi-conducting to semi-metallic forming a Dirac cone. At a critical VEP we observe that, spin-orbit coupling (SOC) effects introduce a gap of $$\sim$$ ∼ 1.5 meV in the Dirac cone at high symmetry point $$\Gamma$$ Γ in the Brillouin zone. This phase of bulk LiMgAs exhibits a trivial nature characterized by the $${\mathbb {Z}}_2$$ Z 2 invariants as (0,000). By further performing dimensional engineering, we cleave [111] plane from the bulk FCC structure and confine the system in one dimension. This low-dimensional phase of LiMgAs has structure similar to the two dimensional $${\text {1T-MoS}}_2$$ 1T-MoS 2 system. Under a relatively lower compressive strain, the low-dimensional system undergoes a TPT and exhibits a non-trivial topological nature characterized by the SOC gap of $$\sim$$ ∼ 55 meV and $${\mathbb {Z}}_2$$ Z 2 invariant $$\nu$$ ν = 1. Although both, the low-dimensional and bulk phase exhibit edge and surface states, the low-dimensional phase is far more superior and exceptional as compared to the bulk parent in terms of the velocity of Fermions ( $${\text {v}}_f$$ v f ) across the surface states. Such a system has promising applications in nano-electronics.Raghottam M. SattigeriPrafulla K. JhaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Raghottam M. Sattigeri Prafulla K. Jha Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs
description	Abstract We propose a novel technique of dimensional engineering to realize low dimensional topological insulator from a trivial three dimensional parent. This is achieved by confining the bulk system to one dimension along a particular crystal direction, thus enhancing the quantum confinement effects in the system. We investigate this mechanism in the Half-Heusler compound LiMgAs with face-centered cubic (FCC) structure. At ambient conditions the bulk FCC structure exhibits a semi-conducting nature. But, under the influence of high volume expansive pressure (VEP) the system undergoes a topological phase transition (TPT) from semi-conducting to semi-metallic forming a Dirac cone. At a critical VEP we observe that, spin-orbit coupling (SOC) effects introduce a gap of $$\sim$$ ∼ 1.5 meV in the Dirac cone at high symmetry point $$\Gamma$$ Γ in the Brillouin zone. This phase of bulk LiMgAs exhibits a trivial nature characterized by the $${\mathbb {Z}}_2$$ Z 2 invariants as (0,000). By further performing dimensional engineering, we cleave [111] plane from the bulk FCC structure and confine the system in one dimension. This low-dimensional phase of LiMgAs has structure similar to the two dimensional $${\text {1T-MoS}}_2$$ 1T-MoS 2 system. Under a relatively lower compressive strain, the low-dimensional system undergoes a TPT and exhibits a non-trivial topological nature characterized by the SOC gap of $$\sim$$ ∼ 55 meV and $${\mathbb {Z}}_2$$ Z 2 invariant $$\nu$$ ν = 1. Although both, the low-dimensional and bulk phase exhibit edge and surface states, the low-dimensional phase is far more superior and exceptional as compared to the bulk parent in terms of the velocity of Fermions ( $${\text {v}}_f$$ v f ) across the surface states. Such a system has promising applications in nano-electronics.
format	article
author	Raghottam M. Sattigeri Prafulla K. Jha
author_facet	Raghottam M. Sattigeri Prafulla K. Jha
author_sort	Raghottam M. Sattigeri
title	Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs
title_short	Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs
title_full	Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs
title_fullStr	Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs
title_full_unstemmed	Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs
title_sort	dimensional engineering of a topological insulating phase in half-heusler limgas
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/37d2cc7ab3f74b508a00d14540f1b0a8
work_keys_str_mv	AT raghottammsattigeri dimensionalengineeringofatopologicalinsulatingphaseinhalfheuslerlimgas AT prafullakjha dimensionalengineeringofatopologicalinsulatingphaseinhalfheuslerlimgas
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Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs

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