Direct band-gap crossover in epitaxial monolayer boron nitride

Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications of the presence of a direct gap of energy 6.1 eV in...

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Autores principales:	C. Elias, P. Valvin, T. Pelini, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/37ee1074b78f488f83916006346b401a
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spelling	oai:doaj.org-article:37ee1074b78f488f83916006346b401a2021-12-02T16:57:45ZDirect band-gap crossover in epitaxial monolayer boron nitride10.1038/s41467-019-10610-52041-1723https://doaj.org/article/37ee1074b78f488f83916006346b401a2019-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10610-5https://doaj.org/toc/2041-1723Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications of the presence of a direct gap of energy 6.1 eV in the single atomic layer.C. EliasP. ValvinT. PeliniA. SummerfieldC. J. MellorT. S. ChengL. EavesC. T. FoxonP. H. BetonS. V. NovikovB. GilG. CassaboisNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q C. Elias P. Valvin T. Pelini A. Summerfield C. J. Mellor T. S. Cheng L. Eaves C. T. Foxon P. H. Beton S. V. Novikov B. Gil G. Cassabois Direct band-gap crossover in epitaxial monolayer boron nitride
description	Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications of the presence of a direct gap of energy 6.1 eV in the single atomic layer.
format	article
author	C. Elias P. Valvin T. Pelini A. Summerfield C. J. Mellor T. S. Cheng L. Eaves C. T. Foxon P. H. Beton S. V. Novikov B. Gil G. Cassabois
author_facet	C. Elias P. Valvin T. Pelini A. Summerfield C. J. Mellor T. S. Cheng L. Eaves C. T. Foxon P. H. Beton S. V. Novikov B. Gil G. Cassabois
author_sort	C. Elias
title	Direct band-gap crossover in epitaxial monolayer boron nitride
title_short	Direct band-gap crossover in epitaxial monolayer boron nitride
title_full	Direct band-gap crossover in epitaxial monolayer boron nitride
title_fullStr	Direct band-gap crossover in epitaxial monolayer boron nitride
title_full_unstemmed	Direct band-gap crossover in epitaxial monolayer boron nitride
title_sort	direct band-gap crossover in epitaxial monolayer boron nitride
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/37ee1074b78f488f83916006346b401a
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Direct band-gap crossover in epitaxial monolayer boron nitride

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