Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~ 100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping, ρ (T) ~ exp [(T0/T)3/4 ], quasi one-dimensional conductivity mechanisms are observed above and below T ~ 200 K, respe...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/383d3bad8c494fd88b22350167bc431d |
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| Sumario: | Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~
100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping,
ρ (T) ~ exp [(T0/T)3/4
], quasi one-dimensional conductivity mechanisms are observed above
and below T ~ 200 K, respectively. The activation energy Ea and the VRH characteristic temperature T0 exhibit high sensitivity to the cation (Ca, Cu) content, attributable to a corresponding variation of the concentration of intrinsic defects associated with Cu vacancies. On the
other hand, no direct dependence of Ea and T0 on the excess oxygen concentration is found. |
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