Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals

Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~ 100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping, ρ (T) ~ exp [(T0/T)3/4 ], quasi one-dimensional conductivity mechanisms are observed above and below T ~ 200 K, respe...

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Autores principales: Lisunov, Constantin, Aruşanov, Ernest, Wizent, N, Waske, A, Werner, J, Tristan, Neumann, Sekar, C, Krabbes, G, Behr, G, Buchner, B
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Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
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Acceso en línea:https://doaj.org/article/383d3bad8c494fd88b22350167bc431d
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spelling oai:doaj.org-article:383d3bad8c494fd88b22350167bc431d2021-11-21T12:05:44ZQuasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals 2537-63651810-648Xhttps://doaj.org/article/383d3bad8c494fd88b22350167bc431d2009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4010https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~ 100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping, ρ (T) ~ exp [(T0/T)3/4 ], quasi one-dimensional conductivity mechanisms are observed above and below T ~ 200 K, respectively. The activation energy Ea and the VRH characteristic temperature T0 exhibit high sensitivity to the cation (Ca, Cu) content, attributable to a corresponding variation of the concentration of intrinsic defects associated with Cu vacancies. On the other hand, no direct dependence of Ea and T0 on the excess oxygen concentration is found. Lisunov, ConstantinAruşanov, ErnestWizent, NWaske, AWerner, JTristan, NeumannSekar, CKrabbes, GBehr, GBuchner, BD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 36-40 (2009)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Lisunov, Constantin
Aruşanov, Ernest
Wizent, N
Waske, A
Werner, J
Tristan, Neumann
Sekar, C
Krabbes, G
Behr, G
Buchner, B
Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
description Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~ 100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping, ρ (T) ~ exp [(T0/T)3/4 ], quasi one-dimensional conductivity mechanisms are observed above and below T ~ 200 K, respectively. The activation energy Ea and the VRH characteristic temperature T0 exhibit high sensitivity to the cation (Ca, Cu) content, attributable to a corresponding variation of the concentration of intrinsic defects associated with Cu vacancies. On the other hand, no direct dependence of Ea and T0 on the excess oxygen concentration is found.
format article
author Lisunov, Constantin
Aruşanov, Ernest
Wizent, N
Waske, A
Werner, J
Tristan, Neumann
Sekar, C
Krabbes, G
Behr, G
Buchner, B
author_facet Lisunov, Constantin
Aruşanov, Ernest
Wizent, N
Waske, A
Werner, J
Tristan, Neumann
Sekar, C
Krabbes, G
Behr, G
Buchner, B
author_sort Lisunov, Constantin
title Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
title_short Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
title_full Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
title_fullStr Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
title_full_unstemmed Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
title_sort quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder cacu2o3 single crystals
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2009
url https://doaj.org/article/383d3bad8c494fd88b22350167bc431d
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