Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~ 100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping, ρ (T) ~ exp [(T0/T)3/4 ], quasi one-dimensional conductivity mechanisms are observed above and below T ~ 200 K, respe...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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oai:doaj.org-article:383d3bad8c494fd88b22350167bc431d2021-11-21T12:05:44ZQuasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals 2537-63651810-648Xhttps://doaj.org/article/383d3bad8c494fd88b22350167bc431d2009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4010https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~ 100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping, ρ (T) ~ exp [(T0/T)3/4 ], quasi one-dimensional conductivity mechanisms are observed above and below T ~ 200 K, respectively. The activation energy Ea and the VRH characteristic temperature T0 exhibit high sensitivity to the cation (Ca, Cu) content, attributable to a corresponding variation of the concentration of intrinsic defects associated with Cu vacancies. On the other hand, no direct dependence of Ea and T0 on the excess oxygen concentration is found. Lisunov, ConstantinAruşanov, ErnestWizent, NWaske, AWerner, JTristan, NeumannSekar, CKrabbes, GBehr, GBuchner, BD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 36-40 (2009) |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Lisunov, Constantin Aruşanov, Ernest Wizent, N Waske, A Werner, J Tristan, Neumann Sekar, C Krabbes, G Behr, G Buchner, B Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals |
description |
Resistivity, ρ (T), of the spin-ladder compound CaCu2O3 is investigated between T ~
100 − 350 K. Both nearest-neighbor hopping, ρ (T) ~ exp (Ea/kT), and variable-range hopping,
ρ (T) ~ exp [(T0/T)3/4
], quasi one-dimensional conductivity mechanisms are observed above
and below T ~ 200 K, respectively. The activation energy Ea and the VRH characteristic temperature T0 exhibit high sensitivity to the cation (Ca, Cu) content, attributable to a corresponding variation of the concentration of intrinsic defects associated with Cu vacancies. On the
other hand, no direct dependence of Ea and T0 on the excess oxygen concentration is found. |
format |
article |
author |
Lisunov, Constantin Aruşanov, Ernest Wizent, N Waske, A Werner, J Tristan, Neumann Sekar, C Krabbes, G Behr, G Buchner, B |
author_facet |
Lisunov, Constantin Aruşanov, Ernest Wizent, N Waske, A Werner, J Tristan, Neumann Sekar, C Krabbes, G Behr, G Buchner, B |
author_sort |
Lisunov, Constantin |
title |
Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
|
title_short |
Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
|
title_full |
Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
|
title_fullStr |
Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
|
title_full_unstemmed |
Quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder CaCu2O3 single crystals
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title_sort |
quasi one-dimensional hopping conductivity of the non-stoichiometric spin-ladder cacu2o3 single crystals |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2009 |
url |
https://doaj.org/article/383d3bad8c494fd88b22350167bc431d |
work_keys_str_mv |
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