Band Structure of Topological Insulator BiSbTe1.25Se1.75

Abstract We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in this compound. We find that the SSBs, which are ar...

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Autores principales:	H. Lohani, P. Mishra, A. Banerjee, K. Majhi, R. Ganesan, U. Manju, D. Topwal, P. S. Anil Kumar, B. R. Sekhar
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/38c97926060c495cafa8809f537eb78a
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spelling	oai:doaj.org-article:38c97926060c495cafa8809f537eb78a2021-12-02T12:32:32ZBand Structure of Topological Insulator BiSbTe1.25Se1.7510.1038/s41598-017-04985-y2045-2322https://doaj.org/article/38c97926060c495cafa8809f537eb78a2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04985-yhttps://doaj.org/toc/2045-2322Abstract We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in this compound. We find that the SSBs, which are are sensitive to the atomic composition of the terminating surface have a partial 3D character. Our detailed study of the band bending (BB) effects shows that in BSTS the Dirac point (DP) shifts by more than two times compared to that in Bi2Se3 to reach the saturation. The stronger BB in BSTS could be due to the difference in screening of the surface charges. From momentum density curves (MDCs) of the ARPES data we obtained an energy dispersion relation showing the warping strength of the Fermi surface in BSTS to be intermediate between those found in Bi2Se3 and Bi2Te3 and also to be tunable by controlling the ratio of chalcogen/pnictogen atoms. Our experiments also reveal that the nature of the BB effects are highly sensitive to the exposure of the fresh surface to various gas species. These findings have important implications in the tuning of DP in TIs for technological applications.H. LohaniP. MishraA. BanerjeeK. MajhiR. GanesanU. ManjuD. TopwalP. S. Anil KumarB. R. SekharNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q H. Lohani P. Mishra A. Banerjee K. Majhi R. Ganesan U. Manju D. Topwal P. S. Anil Kumar B. R. Sekhar Band Structure of Topological Insulator BiSbTe1.25Se1.75
description	Abstract We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in this compound. We find that the SSBs, which are are sensitive to the atomic composition of the terminating surface have a partial 3D character. Our detailed study of the band bending (BB) effects shows that in BSTS the Dirac point (DP) shifts by more than two times compared to that in Bi2Se3 to reach the saturation. The stronger BB in BSTS could be due to the difference in screening of the surface charges. From momentum density curves (MDCs) of the ARPES data we obtained an energy dispersion relation showing the warping strength of the Fermi surface in BSTS to be intermediate between those found in Bi2Se3 and Bi2Te3 and also to be tunable by controlling the ratio of chalcogen/pnictogen atoms. Our experiments also reveal that the nature of the BB effects are highly sensitive to the exposure of the fresh surface to various gas species. These findings have important implications in the tuning of DP in TIs for technological applications.
format	article
author	H. Lohani P. Mishra A. Banerjee K. Majhi R. Ganesan U. Manju D. Topwal P. S. Anil Kumar B. R. Sekhar
author_facet	H. Lohani P. Mishra A. Banerjee K. Majhi R. Ganesan U. Manju D. Topwal P. S. Anil Kumar B. R. Sekhar
author_sort	H. Lohani
title	Band Structure of Topological Insulator BiSbTe1.25Se1.75
title_short	Band Structure of Topological Insulator BiSbTe1.25Se1.75
title_full	Band Structure of Topological Insulator BiSbTe1.25Se1.75
title_fullStr	Band Structure of Topological Insulator BiSbTe1.25Se1.75
title_full_unstemmed	Band Structure of Topological Insulator BiSbTe1.25Se1.75
title_sort	band structure of topological insulator bisbte1.25se1.75
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/38c97926060c495cafa8809f537eb78a
work_keys_str_mv	AT hlohani bandstructureoftopologicalinsulatorbisbte125se175 AT pmishra bandstructureoftopologicalinsulatorbisbte125se175 AT abanerjee bandstructureoftopologicalinsulatorbisbte125se175 AT kmajhi bandstructureoftopologicalinsulatorbisbte125se175 AT rganesan bandstructureoftopologicalinsulatorbisbte125se175 AT umanju bandstructureoftopologicalinsulatorbisbte125se175 AT dtopwal bandstructureoftopologicalinsulatorbisbte125se175 AT psanilkumar bandstructureoftopologicalinsulatorbisbte125se175 AT brsekhar bandstructureoftopologicalinsulatorbisbte125se175
_version_	1718394030831697920

Band Structure of Topological Insulator BiSbTe1.25Se1.75

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