Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions

Abstract Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusion...

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Autores principales:	Janika Tang, Vaibhav Thakore, Tapio Ala-Nissila
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/38fdca6a79e045c7b93553313f5fd77c
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spelling	oai:doaj.org-article:38fdca6a79e045c7b93553313f5fd77c2021-12-02T12:32:39ZPlasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions10.1038/s41598-017-05630-42045-2322https://doaj.org/article/38fdca6a79e045c7b93553313f5fd77c2017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05630-4https://doaj.org/toc/2045-2322Abstract Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57–65% for the incident blackbody radiation from sources at temperatures in the range 400–1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.Janika TangVaibhav ThakoreTapio Ala-NissilaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-20 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Janika Tang Vaibhav Thakore Tapio Ala-Nissila Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
description	Abstract Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57–65% for the incident blackbody radiation from sources at temperatures in the range 400–1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.
format	article
author	Janika Tang Vaibhav Thakore Tapio Ala-Nissila
author_facet	Janika Tang Vaibhav Thakore Tapio Ala-Nissila
author_sort	Janika Tang
title	Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
title_short	Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
title_full	Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
title_fullStr	Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
title_full_unstemmed	Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
title_sort	plasmonically enhanced reflectance of heat radiation from low-bandgap semiconductor microinclusions
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/38fdca6a79e045c7b93553313f5fd77c
work_keys_str_mv	AT janikatang plasmonicallyenhancedreflectanceofheatradiationfromlowbandgapsemiconductormicroinclusions AT vaibhavthakore plasmonicallyenhancedreflectanceofheatradiationfromlowbandgapsemiconductormicroinclusions AT tapioalanissila plasmonicallyenhancedreflectanceofheatradiationfromlowbandgapsemiconductormicroinclusions
_version_	1718393971444547584

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions

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