Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder

Abstract To achieve high detectivity in infrared detectors, it is critical to reduce the device noise. However, for non-crystalline semiconductors, an essential framework is missing to understand and predict the effects of disorder on the dark current. This report presents experimental and modeling...

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Autores principales:	Zhenghui Wu, Ning Li, Naresh Eedugurala, Jason D. Azoulay, Dong-Seok Leem, Tse Nga Ng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/395c17d2a1064cd68077cb282568b37c
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spelling	oai:doaj.org-article:395c17d2a1064cd68077cb282568b37c2021-12-02T16:56:09ZNoise and detectivity limits in organic shortwave infrared photodiodes with low disorder10.1038/s41528-020-0069-x2397-4621https://doaj.org/article/395c17d2a1064cd68077cb282568b37c2020-04-01T00:00:00Zhttps://doi.org/10.1038/s41528-020-0069-xhttps://doaj.org/toc/2397-4621Abstract To achieve high detectivity in infrared detectors, it is critical to reduce the device noise. However, for non-crystalline semiconductors, an essential framework is missing to understand and predict the effects of disorder on the dark current. This report presents experimental and modeling studies on the noise current in exemplar organic bulk heterojunction photodiodes, with 10 donor–acceptor combinations spanning wavelength between 800 and 1600 nm. A significant reduction of the noise and higher detectivity were found in devices using non-fullerene acceptors (NFAs) in comparison to those using fullerene derivatives. The low noise in NFA blends was attributed to a sharp drop off in the distribution of bandtail states, as revealed by variable-temperature density-of-states measurements. Taking disorder into account, we developed a general physical model to explain the dependence of thermal noise on the effective bandgap and bandtail spread. The model provides theoretical targets for the maximum detectivity that can be obtained at different detection wavelengths in inherently disordered infrared photodiodes.Zhenghui WuNing LiNaresh EeduguralaJason D. AzoulayDong-Seok LeemTse Nga NgNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 4, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Zhenghui Wu Ning Li Naresh Eedugurala Jason D. Azoulay Dong-Seok Leem Tse Nga Ng Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
description	Abstract To achieve high detectivity in infrared detectors, it is critical to reduce the device noise. However, for non-crystalline semiconductors, an essential framework is missing to understand and predict the effects of disorder on the dark current. This report presents experimental and modeling studies on the noise current in exemplar organic bulk heterojunction photodiodes, with 10 donor–acceptor combinations spanning wavelength between 800 and 1600 nm. A significant reduction of the noise and higher detectivity were found in devices using non-fullerene acceptors (NFAs) in comparison to those using fullerene derivatives. The low noise in NFA blends was attributed to a sharp drop off in the distribution of bandtail states, as revealed by variable-temperature density-of-states measurements. Taking disorder into account, we developed a general physical model to explain the dependence of thermal noise on the effective bandgap and bandtail spread. The model provides theoretical targets for the maximum detectivity that can be obtained at different detection wavelengths in inherently disordered infrared photodiodes.
format	article
author	Zhenghui Wu Ning Li Naresh Eedugurala Jason D. Azoulay Dong-Seok Leem Tse Nga Ng
author_facet	Zhenghui Wu Ning Li Naresh Eedugurala Jason D. Azoulay Dong-Seok Leem Tse Nga Ng
author_sort	Zhenghui Wu
title	Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
title_short	Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
title_full	Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
title_fullStr	Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
title_full_unstemmed	Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
title_sort	noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/395c17d2a1064cd68077cb282568b37c
work_keys_str_mv	AT zhenghuiwu noiseanddetectivitylimitsinorganicshortwaveinfraredphotodiodeswithlowdisorder AT ningli noiseanddetectivitylimitsinorganicshortwaveinfraredphotodiodeswithlowdisorder AT naresheedugurala noiseanddetectivitylimitsinorganicshortwaveinfraredphotodiodeswithlowdisorder AT jasondazoulay noiseanddetectivitylimitsinorganicshortwaveinfraredphotodiodeswithlowdisorder AT dongseokleem noiseanddetectivitylimitsinorganicshortwaveinfraredphotodiodeswithlowdisorder AT tsengang noiseanddetectivitylimitsinorganicshortwaveinfraredphotodiodeswithlowdisorder
_version_	1718382793403138048

Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder

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