Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of 0.5 s exhibited high leakage current, SiO2 fi...

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Autores principales:	Taehyeon Kim, Changyong Oh, So Hee Park, Joo Won Lee, Sang Ik Lee, Bo Sung Kim
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/3a9ca9665e6e4962a7ae43f995a4b659
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spelling	oai:doaj.org-article:3a9ca9665e6e4962a7ae43f995a4b6592021-12-01T18:52:06ZElectrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times2158-322610.1063/5.0069188https://doaj.org/article/3a9ca9665e6e4962a7ae43f995a4b6592021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0069188https://doaj.org/toc/2158-3226Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of 0.5 s exhibited high leakage current, SiO2 films deposited with a plasma time of 7 s at 150 °C showed excellent dielectric properties, including a low current density of 4.8 × 10−9 A/cm2 at 1 MV/cm and a high breakdown field of 10.5 MV/cm, comparable to those of PEALD-SiO2 films deposited at 350 °C. As the plasma time increased from 0.5 to 7 s, the dielectric constant of SiO2 films decreased from 7.5 to 4.0, which was close to the value of stoichiometric SiO2. Appropriate conduction mechanisms of these SiO2 films with differing electrical characteristics by plasma time were examined. Analyses by x-ray photoelectron spectroscopy and secondary ion mass spectrometry revealed that the quality of SiO2 films largely depended on the amount of defects such as hydroxyl and hydrogen-related species generated by low-temperature deposition.Taehyeon KimChangyong OhSo Hee ParkJoo Won LeeSang Ik LeeBo Sung KimAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115126-115126-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Taehyeon Kim Changyong Oh So Hee Park Joo Won Lee Sang Ik Lee Bo Sung Kim Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
description	Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of 0.5 s exhibited high leakage current, SiO2 films deposited with a plasma time of 7 s at 150 °C showed excellent dielectric properties, including a low current density of 4.8 × 10−9 A/cm2 at 1 MV/cm and a high breakdown field of 10.5 MV/cm, comparable to those of PEALD-SiO2 films deposited at 350 °C. As the plasma time increased from 0.5 to 7 s, the dielectric constant of SiO2 films decreased from 7.5 to 4.0, which was close to the value of stoichiometric SiO2. Appropriate conduction mechanisms of these SiO2 films with differing electrical characteristics by plasma time were examined. Analyses by x-ray photoelectron spectroscopy and secondary ion mass spectrometry revealed that the quality of SiO2 films largely depended on the amount of defects such as hydroxyl and hydrogen-related species generated by low-temperature deposition.
format	article
author	Taehyeon Kim Changyong Oh So Hee Park Joo Won Lee Sang Ik Lee Bo Sung Kim
author_facet	Taehyeon Kim Changyong Oh So Hee Park Joo Won Lee Sang Ik Lee Bo Sung Kim
author_sort	Taehyeon Kim
title	Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
title_short	Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
title_full	Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
title_fullStr	Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
title_full_unstemmed	Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
title_sort	electrical properties of low-temperature sio2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/3a9ca9665e6e4962a7ae43f995a4b659
work_keys_str_mv	AT taehyeonkim electricalpropertiesoflowtemperaturesio2thinfilmspreparedbyplasmaenhancedatomiclayerdepositionwithdifferentplasmatimes AT changyongoh electricalpropertiesoflowtemperaturesio2thinfilmspreparedbyplasmaenhancedatomiclayerdepositionwithdifferentplasmatimes AT soheepark electricalpropertiesoflowtemperaturesio2thinfilmspreparedbyplasmaenhancedatomiclayerdepositionwithdifferentplasmatimes AT joowonlee electricalpropertiesoflowtemperaturesio2thinfilmspreparedbyplasmaenhancedatomiclayerdepositionwithdifferentplasmatimes AT sangiklee electricalpropertiesoflowtemperaturesio2thinfilmspreparedbyplasmaenhancedatomiclayerdepositionwithdifferentplasmatimes AT bosungkim electricalpropertiesoflowtemperaturesio2thinfilmspreparedbyplasmaenhancedatomiclayerdepositionwithdifferentplasmatimes
_version_	1718404685367345152

Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

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