Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times
Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of 0.5 s exhibited high leakage current, SiO2 fi...
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| Auteurs principaux: | , , , , , |
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| Format: | article |
| Langue: | EN |
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AIP Publishing LLC
2021
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| Accès en ligne: | https://doaj.org/article/3a9ca9665e6e4962a7ae43f995a4b659 |
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