Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

The authors investigate the interplay between the stacking order and the interlayer coupling in MoS2 homobilayers as well as artificially stacked bilayers grown by chemical vapour deposition, and identify the interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupl...

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Autores principales:	Ioannis Paradisanos, Shivangi Shree, Antony George, Nadine Leisgang, Cedric Robert, Kenji Watanabe, Takashi Taniguchi, Richard J. Warburton, Andrey Turchanin, Xavier Marie, Iann C. Gerber, Bernhard Urbaszek
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/3a9f151ebbc14e63900ca397966936ba
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spelling	oai:doaj.org-article:3a9f151ebbc14e63900ca397966936ba2021-12-02T16:50:26ZControlling interlayer excitons in MoS2 layers grown by chemical vapor deposition10.1038/s41467-020-16023-z2041-1723https://doaj.org/article/3a9f151ebbc14e63900ca397966936ba2020-05-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16023-zhttps://doaj.org/toc/2041-1723The authors investigate the interplay between the stacking order and the interlayer coupling in MoS2 homobilayers as well as artificially stacked bilayers grown by chemical vapour deposition, and identify the interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling.Ioannis ParadisanosShivangi ShreeAntony GeorgeNadine LeisgangCedric RobertKenji WatanabeTakashi TaniguchiRichard J. WarburtonAndrey TurchaninXavier MarieIann C. GerberBernhard UrbaszekNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ioannis Paradisanos Shivangi Shree Antony George Nadine Leisgang Cedric Robert Kenji Watanabe Takashi Taniguchi Richard J. Warburton Andrey Turchanin Xavier Marie Iann C. Gerber Bernhard Urbaszek Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
description	The authors investigate the interplay between the stacking order and the interlayer coupling in MoS2 homobilayers as well as artificially stacked bilayers grown by chemical vapour deposition, and identify the interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling.
format	article
author	Ioannis Paradisanos Shivangi Shree Antony George Nadine Leisgang Cedric Robert Kenji Watanabe Takashi Taniguchi Richard J. Warburton Andrey Turchanin Xavier Marie Iann C. Gerber Bernhard Urbaszek
author_facet	Ioannis Paradisanos Shivangi Shree Antony George Nadine Leisgang Cedric Robert Kenji Watanabe Takashi Taniguchi Richard J. Warburton Andrey Turchanin Xavier Marie Iann C. Gerber Bernhard Urbaszek
author_sort	Ioannis Paradisanos
title	Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
title_short	Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
title_full	Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
title_fullStr	Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
title_full_unstemmed	Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
title_sort	controlling interlayer excitons in mos2 layers grown by chemical vapor deposition
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/3a9f151ebbc14e63900ca397966936ba
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Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

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