An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.

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Auteurs principaux:	Shun-Chang Liu, Chen-Min Dai, Yimeng Min, Yi Hou, Andrew H. Proppe, Ying Zhou, Chao Chen, Shiyou Chen, Jiang Tang, Ding-Jiang Xue, Edward H. Sargent, Jin-Song Hu
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2021
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a
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spelling	oai:doaj.org-article:3ad65eaaf90b4172afb09d09ff7c123a2021-12-02T10:47:58ZAn antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics10.1038/s41467-021-20955-52041-1723https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-20955-5https://doaj.org/toc/2041-1723Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.Shun-Chang LiuChen-Min DaiYimeng MinYi HouAndrew H. ProppeYing ZhouChao ChenShiyou ChenJiang TangDing-Jiang XueEdward H. SargentJin-Song HuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Shun-Chang Liu Chen-Min Dai Yimeng Min Yi Hou Andrew H. Proppe Ying Zhou Chao Chen Shiyou Chen Jiang Tang Ding-Jiang Xue Edward H. Sargent Jin-Song Hu An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
description	Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.
format	article
author	Shun-Chang Liu Chen-Min Dai Yimeng Min Yi Hou Andrew H. Proppe Ying Zhou Chao Chen Shiyou Chen Jiang Tang Ding-Jiang Xue Edward H. Sargent Jin-Song Hu
author_facet	Shun-Chang Liu Chen-Min Dai Yimeng Min Yi Hou Andrew H. Proppe Ying Zhou Chao Chen Shiyou Chen Jiang Tang Ding-Jiang Xue Edward H. Sargent Jin-Song Hu
author_sort	Shun-Chang Liu
title	An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_short	An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_full	An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_fullStr	An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_full_unstemmed	An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_sort	antibonding valence band maximum enables defect-tolerant and stable gese photovoltaics
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a
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An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

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