An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.

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Autores principales: Shun-Chang Liu, Chen-Min Dai, Yimeng Min, Yi Hou, Andrew H. Proppe, Ying Zhou, Chao Chen, Shiyou Chen, Jiang Tang, Ding-Jiang Xue, Edward H. Sargent, Jin-Song Hu
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a
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spelling oai:doaj.org-article:3ad65eaaf90b4172afb09d09ff7c123a2021-12-02T10:47:58ZAn antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics10.1038/s41467-021-20955-52041-1723https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-20955-5https://doaj.org/toc/2041-1723Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.Shun-Chang LiuChen-Min DaiYimeng MinYi HouAndrew H. ProppeYing ZhouChao ChenShiyou ChenJiang TangDing-Jiang XueEdward H. SargentJin-Song HuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Shun-Chang Liu
Chen-Min Dai
Yimeng Min
Yi Hou
Andrew H. Proppe
Ying Zhou
Chao Chen
Shiyou Chen
Jiang Tang
Ding-Jiang Xue
Edward H. Sargent
Jin-Song Hu
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
description Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.
format article
author Shun-Chang Liu
Chen-Min Dai
Yimeng Min
Yi Hou
Andrew H. Proppe
Ying Zhou
Chao Chen
Shiyou Chen
Jiang Tang
Ding-Jiang Xue
Edward H. Sargent
Jin-Song Hu
author_facet Shun-Chang Liu
Chen-Min Dai
Yimeng Min
Yi Hou
Andrew H. Proppe
Ying Zhou
Chao Chen
Shiyou Chen
Jiang Tang
Ding-Jiang Xue
Edward H. Sargent
Jin-Song Hu
author_sort Shun-Chang Liu
title An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_short An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_full An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_fullStr An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_full_unstemmed An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
title_sort antibonding valence band maximum enables defect-tolerant and stable gese photovoltaics
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a
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