An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.
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Nature Portfolio
2021
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oai:doaj.org-article:3ad65eaaf90b4172afb09d09ff7c123a2021-12-02T10:47:58ZAn antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics10.1038/s41467-021-20955-52041-1723https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-20955-5https://doaj.org/toc/2041-1723Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding.Shun-Chang LiuChen-Min DaiYimeng MinYi HouAndrew H. ProppeYing ZhouChao ChenShiyou ChenJiang TangDing-Jiang XueEdward H. SargentJin-Song HuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-7 (2021) |
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Science Q Shun-Chang Liu Chen-Min Dai Yimeng Min Yi Hou Andrew H. Proppe Ying Zhou Chao Chen Shiyou Chen Jiang Tang Ding-Jiang Xue Edward H. Sargent Jin-Song Hu An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics |
description |
Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due to its strong covalent bonding. |
format |
article |
author |
Shun-Chang Liu Chen-Min Dai Yimeng Min Yi Hou Andrew H. Proppe Ying Zhou Chao Chen Shiyou Chen Jiang Tang Ding-Jiang Xue Edward H. Sargent Jin-Song Hu |
author_facet |
Shun-Chang Liu Chen-Min Dai Yimeng Min Yi Hou Andrew H. Proppe Ying Zhou Chao Chen Shiyou Chen Jiang Tang Ding-Jiang Xue Edward H. Sargent Jin-Song Hu |
author_sort |
Shun-Chang Liu |
title |
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics |
title_short |
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics |
title_full |
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics |
title_fullStr |
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics |
title_full_unstemmed |
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics |
title_sort |
antibonding valence band maximum enables defect-tolerant and stable gese photovoltaics |
publisher |
Nature Portfolio |
publishDate |
2021 |
url |
https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a |
work_keys_str_mv |
AT shunchangliu anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT chenmindai anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT yimengmin anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT yihou anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT andrewhproppe anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT yingzhou anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT chaochen anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT shiyouchen anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT jiangtang anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT dingjiangxue anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT edwardhsargent anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT jinsonghu anantibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT shunchangliu antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT chenmindai antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT yimengmin antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT yihou antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT andrewhproppe antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT yingzhou antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT chaochen antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT shiyouchen antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT jiangtang antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT dingjiangxue antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT edwardhsargent antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics AT jinsonghu antibondingvalencebandmaximumenablesdefecttolerantandstablegesephotovoltaics |
_version_ |
1718396703622561792 |