Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography

Abstract Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. How...

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Autores principales: Péter Kun, Bálint Fülöp, Gergely Dobrik, Péter Nemes-Incze, István Endre Lukács, Szabolcs Csonka, Chanyong Hwang, Levente Tapasztó
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Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/3b8e848fd197431aae41bb5701894b93
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spelling oai:doaj.org-article:3b8e848fd197431aae41bb5701894b932021-12-02T13:41:48ZRobust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography10.1038/s41699-020-00177-x2397-7132https://doaj.org/article/3b8e848fd197431aae41bb5701894b932020-12-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00177-xhttps://doaj.org/toc/2397-7132Abstract Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/−1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard SiO2/Si substrates, down to low conductance quanta. Conductance plateaus, were observed at n × e2/h, evenly spaced by 2 × e 2 /h (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by e 2 /h (n = 1, 2, 3, 4, 5, 6) in 8 T magnetic field.Péter KunBálint FülöpGergely DobrikPéter Nemes-InczeIstván Endre LukácsSzabolcs CsonkaChanyong HwangLevente TapasztóNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 4, Iss 1, Pp 1-6 (2020)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Péter Kun
Bálint Fülöp
Gergely Dobrik
Péter Nemes-Incze
István Endre Lukács
Szabolcs Csonka
Chanyong Hwang
Levente Tapasztó
Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
description Abstract Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/−1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard SiO2/Si substrates, down to low conductance quanta. Conductance plateaus, were observed at n × e2/h, evenly spaced by 2 × e 2 /h (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by e 2 /h (n = 1, 2, 3, 4, 5, 6) in 8 T magnetic field.
format article
author Péter Kun
Bálint Fülöp
Gergely Dobrik
Péter Nemes-Incze
István Endre Lukács
Szabolcs Csonka
Chanyong Hwang
Levente Tapasztó
author_facet Péter Kun
Bálint Fülöp
Gergely Dobrik
Péter Nemes-Incze
István Endre Lukács
Szabolcs Csonka
Chanyong Hwang
Levente Tapasztó
author_sort Péter Kun
title Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
title_short Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
title_full Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
title_fullStr Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
title_full_unstemmed Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
title_sort robust quantum point contact operation of narrow graphene constrictions patterned by afm cleavage lithography
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/3b8e848fd197431aae41bb5701894b93
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