Anomalies in magnetoresistance of bismuth wires in high magnetic fields
Anomalous peaks in the magnetoresistance of Bi wires have been observed in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and a uniaxial strain, we have obtained a modification of the electronic structure; as a result, the quantum limit for light an...
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| Formato: | article |
| Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2015
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/3bbbd360a56d4643bb1142f4747c6516 |
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| Sumario: | Anomalous peaks in the magnetoresistance of Bi wires have been observed in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and a uniaxial strain, we have obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons has changed in a different way. The origin of anomalous peaks is attributed to the complexity of the structure of the lowest Landau level of heavy electron pockets in a high magnetic field. |
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