Anomalies in magnetoresistance of bismuth wires in high magnetic fields

Anomalous peaks in the magnetoresistance of Bi wires have been observed in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and a uniaxial strain, we have obtained a modification of the electronic structure; as a result, the quantum limit for light an...

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Autor principal:	Condrea, Elena
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2015
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/3bbbd360a56d4643bb1142f4747c6516
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spelling	oai:doaj.org-article:3bbbd360a56d4643bb1142f4747c65162021-11-21T11:58:14ZAnomalies in magnetoresistance of bismuth wires in high magnetic fields537.6/.82537-63651810-648Xhttps://doaj.org/article/3bbbd360a56d4643bb1142f4747c65162015-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2015/article/43549https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Anomalous peaks in the magnetoresistance of Bi wires have been observed in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and a uniaxial strain, we have obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons has changed in a different way. The origin of anomalous peaks is attributed to the complexity of the structure of the lowest Landau level of heavy electron pockets in a high magnetic field. Condrea, ElenaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 14, Iss 3-4, Pp 189-200 (2015)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Condrea, Elena Anomalies in magnetoresistance of bismuth wires in high magnetic fields
description	Anomalous peaks in the magnetoresistance of Bi wires have been observed in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and a uniaxial strain, we have obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons has changed in a different way. The origin of anomalous peaks is attributed to the complexity of the structure of the lowest Landau level of heavy electron pockets in a high magnetic field.
format	article
author	Condrea, Elena
author_facet	Condrea, Elena
author_sort	Condrea, Elena
title	Anomalies in magnetoresistance of bismuth wires in high magnetic fields
title_short	Anomalies in magnetoresistance of bismuth wires in high magnetic fields
title_full	Anomalies in magnetoresistance of bismuth wires in high magnetic fields
title_fullStr	Anomalies in magnetoresistance of bismuth wires in high magnetic fields
title_full_unstemmed	Anomalies in magnetoresistance of bismuth wires in high magnetic fields
title_sort	anomalies in magnetoresistance of bismuth wires in high magnetic fields
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2015
url	https://doaj.org/article/3bbbd360a56d4643bb1142f4747c6516
work_keys_str_mv	AT condreaelena anomaliesinmagnetoresistanceofbismuthwiresinhighmagneticfields
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Anomalies in magnetoresistance of bismuth wires in high magnetic fields

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