A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (t<sub>co</sub>...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/3c2cd708a5234bc5913d4007ded0a720 |
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| Sumario: | In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (t<sub>co</sub>) of MCD can be set to very thin while achieving a low maximum oxide electric field (E<sub>MOX</sub>) under 3 MV/cm. Therefore, the turn-on voltage (V<sub>F</sub>) of the proposed structure was 1.43 V, deactivating the parasitic PIN body diode. Compared with the SJ-MOSFET, the reverse recovery time (t<sub>rr</sub>) and the reverse recovery charge (Q<sub>rr</sub>) were improved by 43% and 59%, respectively. Although there is a slight increase in specific on-resistance (R<sub>ON</sub>), the MCD SJ-MOSFET shows very low input capacitance (C<sub>ISS</sub>) and gate to drain capacitance (C<sub>GD</sub>) due to the reduced active gate. Therefore, significantly improved figures of merit R<sub>ON</sub> × C<sub>GD</sub> by a factor of 4.3 are achieved compared to SJ-MOSFET. As a result, the proposed structure reduced the switching time as well as the switching energy loss (E<sub>SW</sub>). Moreover, electro-thermal simulation results show that the MCD SJ-MOSFET has a short circuit withstand time (t<sub>SC</sub>) more than twice that of the SJ-MOSFET at various DC bus voltages (400 and 600 V). |
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