A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (t<sub>co</sub>...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jongwoon Yoon, Kwangsoo Kim
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	SiC MOSFET superjunction turn-on voltage reverse recovery charge gate drain capacitance switching energy loss Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/3c2cd708a5234bc5913d4007ded0a720
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:3c2cd708a5234bc5913d4007ded0a720
record_format	dspace
spelling	oai:doaj.org-article:3c2cd708a5234bc5913d4007ded0a7202021-11-11T15:38:22ZA Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness10.3390/electronics102126192079-9292https://doaj.org/article/3c2cd708a5234bc5913d4007ded0a7202021-10-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2619https://doaj.org/toc/2079-9292In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (t<sub>co</sub>) of MCD can be set to very thin while achieving a low maximum oxide electric field (E<sub>MOX</sub>) under 3 MV/cm. Therefore, the turn-on voltage (V<sub>F</sub>) of the proposed structure was 1.43 V, deactivating the parasitic PIN body diode. Compared with the SJ-MOSFET, the reverse recovery time (t<sub>rr</sub>) and the reverse recovery charge (Q<sub>rr</sub>) were improved by 43% and 59%, respectively. Although there is a slight increase in specific on-resistance (R<sub>ON</sub>), the MCD SJ-MOSFET shows very low input capacitance (C<sub>ISS</sub>) and gate to drain capacitance (C<sub>GD</sub>) due to the reduced active gate. Therefore, significantly improved figures of merit R<sub>ON</sub> × C<sub>GD</sub> by a factor of 4.3 are achieved compared to SJ-MOSFET. As a result, the proposed structure reduced the switching time as well as the switching energy loss (E<sub>SW</sub>). Moreover, electro-thermal simulation results show that the MCD SJ-MOSFET has a short circuit withstand time (t<sub>SC</sub>) more than twice that of the SJ-MOSFET at various DC bus voltages (400 and 600 V).Jongwoon YoonKwangsoo KimMDPI AGarticleSiC MOSFETsuperjunctionturn-on voltagereverse recovery chargegate drain capacitanceswitching energy lossElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2619, p 2619 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	SiC MOSFET superjunction turn-on voltage reverse recovery charge gate drain capacitance switching energy loss Electronics TK7800-8360
spellingShingle	SiC MOSFET superjunction turn-on voltage reverse recovery charge gate drain capacitance switching energy loss Electronics TK7800-8360 Jongwoon Yoon Kwangsoo Kim A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
description	In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (t<sub>co</sub>) of MCD can be set to very thin while achieving a low maximum oxide electric field (E<sub>MOX</sub>) under 3 MV/cm. Therefore, the turn-on voltage (V<sub>F</sub>) of the proposed structure was 1.43 V, deactivating the parasitic PIN body diode. Compared with the SJ-MOSFET, the reverse recovery time (t<sub>rr</sub>) and the reverse recovery charge (Q<sub>rr</sub>) were improved by 43% and 59%, respectively. Although there is a slight increase in specific on-resistance (R<sub>ON</sub>), the MCD SJ-MOSFET shows very low input capacitance (C<sub>ISS</sub>) and gate to drain capacitance (C<sub>GD</sub>) due to the reduced active gate. Therefore, significantly improved figures of merit R<sub>ON</sub> × C<sub>GD</sub> by a factor of 4.3 are achieved compared to SJ-MOSFET. As a result, the proposed structure reduced the switching time as well as the switching energy loss (E<sub>SW</sub>). Moreover, electro-thermal simulation results show that the MCD SJ-MOSFET has a short circuit withstand time (t<sub>SC</sub>) more than twice that of the SJ-MOSFET at various DC bus voltages (400 and 600 V).
format	article
author	Jongwoon Yoon Kwangsoo Kim
author_facet	Jongwoon Yoon Kwangsoo Kim
author_sort	Jongwoon Yoon
title	A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
title_short	A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
title_full	A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
title_fullStr	A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
title_full_unstemmed	A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
title_sort	novel mos-channel diode embedded in a sic superjunction mosfet for enhanced switching performance and superior short circuit ruggedness
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/3c2cd708a5234bc5913d4007ded0a720
work_keys_str_mv	AT jongwoonyoon anovelmoschanneldiodeembeddedinasicsuperjunctionmosfetforenhancedswitchingperformanceandsuperiorshortcircuitruggedness AT kwangsookim anovelmoschanneldiodeembeddedinasicsuperjunctionmosfetforenhancedswitchingperformanceandsuperiorshortcircuitruggedness AT jongwoonyoon novelmoschanneldiodeembeddedinasicsuperjunctionmosfetforenhancedswitchingperformanceandsuperiorshortcircuitruggedness AT kwangsookim novelmoschanneldiodeembeddedinasicsuperjunctionmosfetforenhancedswitchingperformanceandsuperiorshortcircuitruggedness
_version_	1718434789734744064

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

Ejemplares similares