GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to t...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/3d5062c1bd39459086e6a2ed57effaf4 |
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| Sumario: | GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane
carrier transport in the wetting layer have been fabricated and characterized. The devices are
operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue-
shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts. |
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