GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns

GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to t...

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Autor principal:	Lupu, Andrei
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/3d5062c1bd39459086e6a2ed57effaf4
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id	oai:doaj.org-article:3d5062c1bd39459086e6a2ed57effaf4
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spelling	oai:doaj.org-article:3d5062c1bd39459086e6a2ed57effaf42021-11-21T12:09:11ZGaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns2537-63651810-648Xhttps://doaj.org/article/3d5062c1bd39459086e6a2ed57effaf42006-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3591https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue- shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts. Lupu, AndreiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 3-4, Pp 349-354 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Lupu, Andrei GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
description	GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue- shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts.
format	article
author	Lupu, Andrei
author_facet	Lupu, Andrei
author_sort	Lupu, Andrei
title	GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
title_short	GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
title_full	GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
title_fullStr	GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
title_full_unstemmed	GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns
title_sort	gan/aln quantum dot intraband photodetectors at 1.3-1.5 microns
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/3d5062c1bd39459086e6a2ed57effaf4
work_keys_str_mv	AT lupuandrei ganalnquantumdotintrabandphotodetectorsat1315microns
_version_	1718419179576492032

GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns

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