Non-random walk diffusion enhances the sink strength of semicoherent interfaces

Materials resistant to radiation damage could improve the safety, efficiency and sustainability of nuclear energy. Here, the authors suggest that some materials and interfaces may be effective sinks for defects caused by this damage and propose that elastic interactions enhance sink strength.

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Autores principales:	A. Vattré, T. Jourdan, H. Ding, M.-C. Marinica, M. J. Demkowicz
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/3d9926a831ba49dcb48b929e7b8be446
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spelling	oai:doaj.org-article:3d9926a831ba49dcb48b929e7b8be4462021-12-02T17:32:50ZNon-random walk diffusion enhances the sink strength of semicoherent interfaces10.1038/ncomms104242041-1723https://doaj.org/article/3d9926a831ba49dcb48b929e7b8be4462016-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms10424https://doaj.org/toc/2041-1723Materials resistant to radiation damage could improve the safety, efficiency and sustainability of nuclear energy. Here, the authors suggest that some materials and interfaces may be effective sinks for defects caused by this damage and propose that elastic interactions enhance sink strength.A. VattréT. JourdanH. DingM.-C. MarinicaM. J. DemkowiczNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-10 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q A. Vattré T. Jourdan H. Ding M.-C. Marinica M. J. Demkowicz Non-random walk diffusion enhances the sink strength of semicoherent interfaces
description	Materials resistant to radiation damage could improve the safety, efficiency and sustainability of nuclear energy. Here, the authors suggest that some materials and interfaces may be effective sinks for defects caused by this damage and propose that elastic interactions enhance sink strength.
format	article
author	A. Vattré T. Jourdan H. Ding M.-C. Marinica M. J. Demkowicz
author_facet	A. Vattré T. Jourdan H. Ding M.-C. Marinica M. J. Demkowicz
author_sort	A. Vattré
title	Non-random walk diffusion enhances the sink strength of semicoherent interfaces
title_short	Non-random walk diffusion enhances the sink strength of semicoherent interfaces
title_full	Non-random walk diffusion enhances the sink strength of semicoherent interfaces
title_fullStr	Non-random walk diffusion enhances the sink strength of semicoherent interfaces
title_full_unstemmed	Non-random walk diffusion enhances the sink strength of semicoherent interfaces
title_sort	non-random walk diffusion enhances the sink strength of semicoherent interfaces
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/3d9926a831ba49dcb48b929e7b8be446
work_keys_str_mv	AT avattre nonrandomwalkdiffusionenhancesthesinkstrengthofsemicoherentinterfaces AT tjourdan nonrandomwalkdiffusionenhancesthesinkstrengthofsemicoherentinterfaces AT hding nonrandomwalkdiffusionenhancesthesinkstrengthofsemicoherentinterfaces AT mcmarinica nonrandomwalkdiffusionenhancesthesinkstrengthofsemicoherentinterfaces AT mjdemkowicz nonrandomwalkdiffusionenhancesthesinkstrengthofsemicoherentinterfaces
_version_	1718380179531759616

Non-random walk diffusion enhances the sink strength of semicoherent interfaces

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