Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System

Abstract Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S...

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Autores principales:	Xinyu Huang, Qing Jiao, Changgui Lin, Hongli Ma, Xianghua Zhang, Erwei Zhu, Xueyun Liu, Shixun Dai, Tiefeng Xu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3dad931b2ee34b9e83a5064a8fa4f332
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spelling	oai:doaj.org-article:3dad931b2ee34b9e83a5064a8fa4f3322021-12-02T15:08:49ZFormation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System10.1038/s41598-018-20144-32045-2322https://doaj.org/article/3dad931b2ee34b9e83a5064a8fa4f3322018-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-20144-3https://doaj.org/toc/2045-2322Abstract Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S3 contents. The Ga2S3-Sb2S3-AgI glasses possess a wide region of transmission window (0.65−14 μm). An ionic conductivity of approximately 1.01 × 10−3 S/cm can be obtained for a 40 (0.8Sb2S3-0.2Ga2S3)-60AgI glass at an ambient temperature, and the ionic conductivity increased as temperature increased. The relative activation energy of Ag+ conduction was also calculated. These novel glasses show potential for the combined application of infrared optics and solid electrolytes.Xinyu HuangQing JiaoChanggui LinHongli MaXianghua ZhangErwei ZhuXueyun LiuShixun DaiTiefeng XuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Xinyu Huang Qing Jiao Changgui Lin Hongli Ma Xianghua Zhang Erwei Zhu Xueyun Liu Shixun Dai Tiefeng Xu Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
description	Abstract Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S3 contents. The Ga2S3-Sb2S3-AgI glasses possess a wide region of transmission window (0.65−14 μm). An ionic conductivity of approximately 1.01 × 10−3 S/cm can be obtained for a 40 (0.8Sb2S3-0.2Ga2S3)-60AgI glass at an ambient temperature, and the ionic conductivity increased as temperature increased. The relative activation energy of Ag+ conduction was also calculated. These novel glasses show potential for the combined application of infrared optics and solid electrolytes.
format	article
author	Xinyu Huang Qing Jiao Changgui Lin Hongli Ma Xianghua Zhang Erwei Zhu Xueyun Liu Shixun Dai Tiefeng Xu
author_facet	Xinyu Huang Qing Jiao Changgui Lin Hongli Ma Xianghua Zhang Erwei Zhu Xueyun Liu Shixun Dai Tiefeng Xu
author_sort	Xinyu Huang
title	Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
title_short	Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
title_full	Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
title_fullStr	Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
title_full_unstemmed	Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
title_sort	formation, microstructure, and conductivity of a novel ga2s3-sb2s3-agi chalcogenide system
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/3dad931b2ee34b9e83a5064a8fa4f332
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Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System

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