Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure

2D electron gas for nanoscale spintronic deviceseditor Calculations reveal the potential for a nanoscale spintronic transistor that works at room temperature. T. H. Wang and H. T. Jeng of Taiwan’s National Tsing Hua University demonstrated through ‘first-principle’ calculations that an ideal two-dim...

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Autores principales:	Te-Hsien Wang, Horng-Tay Jeng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
Acceso en línea:	https://doaj.org/article/3df51cbb0caf41319ee173eed1b4ac9a
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spelling	oai:doaj.org-article:3df51cbb0caf41319ee173eed1b4ac9a2021-12-02T16:19:45ZWide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure10.1038/s41524-017-0011-52057-3960https://doaj.org/article/3df51cbb0caf41319ee173eed1b4ac9a2017-02-01T00:00:00Zhttps://doi.org/10.1038/s41524-017-0011-5https://doaj.org/toc/2057-39602D electron gas for nanoscale spintronic deviceseditor Calculations reveal the potential for a nanoscale spintronic transistor that works at room temperature. T. H. Wang and H. T. Jeng of Taiwan’s National Tsing Hua University demonstrated through ‘first-principle’ calculations that an ideal two-dimensional electron gas, crucial for semiconductor spintronic applications, can be realized at room temperature in an insulating bismuth selenide ultrathin film grown on a semiconducting molybdenum titelluride substrate. The 2D electron gas formed in the ultrathin device demonstrated large ‘spin-splitting’, a separation between the two states of electron spin, which is needed for transistor-like devices. Spintronic devices use the intrinsic spinning property of electrons to process information instead of the electron charge used in conventional electronics. They could lead to devices that can store more data in a smaller space while consuming less power and using cheaper materials.Te-Hsien WangHorng-Tay JengNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Computer softwareQA76.75-76.765ENnpj Computational Materials, Vol 3, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765 Te-Hsien Wang Horng-Tay Jeng Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure
description	2D electron gas for nanoscale spintronic deviceseditor Calculations reveal the potential for a nanoscale spintronic transistor that works at room temperature. T. H. Wang and H. T. Jeng of Taiwan’s National Tsing Hua University demonstrated through ‘first-principle’ calculations that an ideal two-dimensional electron gas, crucial for semiconductor spintronic applications, can be realized at room temperature in an insulating bismuth selenide ultrathin film grown on a semiconducting molybdenum titelluride substrate. The 2D electron gas formed in the ultrathin device demonstrated large ‘spin-splitting’, a separation between the two states of electron spin, which is needed for transistor-like devices. Spintronic devices use the intrinsic spinning property of electrons to process information instead of the electron charge used in conventional electronics. They could lead to devices that can store more data in a smaller space while consuming less power and using cheaper materials.
format	article
author	Te-Hsien Wang Horng-Tay Jeng
author_facet	Te-Hsien Wang Horng-Tay Jeng
author_sort	Te-Hsien Wang
title	Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure
title_short	Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure
title_full	Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure
title_fullStr	Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure
title_full_unstemmed	Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure
title_sort	wide-range ideal 2d rashba electron gas with large spin splitting in bi2se3/mote2 heterostructure
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/3df51cbb0caf41319ee173eed1b4ac9a
work_keys_str_mv	AT tehsienwang widerangeideal2drashbaelectrongaswithlargespinsplittinginbi2se3mote2heterostructure AT horngtayjeng widerangeideal2drashbaelectrongaswithlargespinsplittinginbi2se3mote2heterostructure
_version_	1718384163910844416

Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure

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