Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices

Abstract Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests for electronic devices. Extending the 2D lateral heterostructures to spintronics demands more diverse electroma...

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Autores principales:	Kaiyun Chen, Junkai Deng, Yuan Yan, Qian Shi, Tieyan Chang, Xiangdong Ding, Jun Sun, Sen Yang, Jefferson Zhe Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
Acceso en línea:	https://doaj.org/article/3e300bf0657d4c2c975aecadd7b6cd16
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spelling	oai:doaj.org-article:3e300bf0657d4c2c975aecadd7b6cd162021-12-02T17:51:12ZDiverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices10.1038/s41524-021-00547-z2057-3960https://doaj.org/article/3e300bf0657d4c2c975aecadd7b6cd162021-05-01T00:00:00Zhttps://doi.org/10.1038/s41524-021-00547-zhttps://doaj.org/toc/2057-3960Abstract Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests for electronic devices. Extending the 2D lateral heterostructures to spintronics demands more diverse electromagnetic properties of 2D materials. In this paper, using density functional theory calculations, we survey all IV, V, and VI group transition metal dichalcogenides (TMDs) and discover that CrS2 has the most diverse electronic and magnetic properties: antiferromagnetic (AFM) metallic 1T phase, non-magnetic (NM) semiconductor 2H phase, and ferromagnetic (FM) semiconductor 1T′ phase with a Curie temperature of ~1000 K. Interestingly, we find that a tensile or compressive strain can turn the 1T′ phase into a spin-up or spin-down half-metal. Such strain tunability can be attributed to the lattice deformation under tensile/compressive strain that selectively promotes the spin-up/spin-down VBM (valence band bottom) orbital interactions. The diverse electromagnetic properties and the strain tunability enable strain-controlled spintronic devices using a single piece of CrS2 nanosheet with improved energy efficiency. As a demo, a prototypical design of the spin-valve logic device is presented. It offers a promising solution to address the challenge of high energy consumption in miniaturized spintronic devices.Kaiyun ChenJunkai DengYuan YanQian ShiTieyan ChangXiangdong DingJun SunSen YangJefferson Zhe LiuNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Computer softwareQA76.75-76.765ENnpj Computational Materials, Vol 7, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765 Kaiyun Chen Junkai Deng Yuan Yan Qian Shi Tieyan Chang Xiangdong Ding Jun Sun Sen Yang Jefferson Zhe Liu Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices
description	Abstract Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests for electronic devices. Extending the 2D lateral heterostructures to spintronics demands more diverse electromagnetic properties of 2D materials. In this paper, using density functional theory calculations, we survey all IV, V, and VI group transition metal dichalcogenides (TMDs) and discover that CrS2 has the most diverse electronic and magnetic properties: antiferromagnetic (AFM) metallic 1T phase, non-magnetic (NM) semiconductor 2H phase, and ferromagnetic (FM) semiconductor 1T′ phase with a Curie temperature of ~1000 K. Interestingly, we find that a tensile or compressive strain can turn the 1T′ phase into a spin-up or spin-down half-metal. Such strain tunability can be attributed to the lattice deformation under tensile/compressive strain that selectively promotes the spin-up/spin-down VBM (valence band bottom) orbital interactions. The diverse electromagnetic properties and the strain tunability enable strain-controlled spintronic devices using a single piece of CrS2 nanosheet with improved energy efficiency. As a demo, a prototypical design of the spin-valve logic device is presented. It offers a promising solution to address the challenge of high energy consumption in miniaturized spintronic devices.
format	article
author	Kaiyun Chen Junkai Deng Yuan Yan Qian Shi Tieyan Chang Xiangdong Ding Jun Sun Sen Yang Jefferson Zhe Liu
author_facet	Kaiyun Chen Junkai Deng Yuan Yan Qian Shi Tieyan Chang Xiangdong Ding Jun Sun Sen Yang Jefferson Zhe Liu
author_sort	Kaiyun Chen
title	Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices
title_short	Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices
title_full	Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices
title_fullStr	Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices
title_full_unstemmed	Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices
title_sort	diverse electronic and magnetic properties of crs2 enabling strain-controlled 2d lateral heterostructure spintronic devices
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3e300bf0657d4c2c975aecadd7b6cd16
work_keys_str_mv	AT kaiyunchen diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT junkaideng diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT yuanyan diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT qianshi diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT tieyanchang diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT xiangdongding diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT junsun diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT senyang diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices AT jeffersonzheliu diverseelectronicandmagneticpropertiesofcrs2enablingstraincontrolled2dlateralheterostructurespintronicdevices
_version_	1718379279881863168

Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices

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