Record thermopower found in an IrMn-based spintronic stack

Antiferromagnetic materials are potentially useful for spintronic applications. Here, the authors report high thermoelectric power value of 390 μV/K Seebeck coefficient in IrMn-based half magnetic tunnel junctions at room temperature.

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Detalles Bibliográficos
Autores principales: Sa Tu, Timothy Ziman, Guoqiang Yu, Caihua Wan, Junfeng Hu, Hao Wu, Hanchen Wang, Mengchao Liu, Chuanpu Liu, Chenyang Guo, Jianyu Zhang, Marco A. Cabero Z., Youguang Zhang, Peng Gao, Song Liu, Dapeng Yu, Xiufeng Han, Ingrid Hallsteinsen, Dustin A. Gilbert, Mamoru Matsuo, Yuichi Ohnuma, Peter Wölfle, Kang L. Wang, Jean-Philippe Ansermet, Sadamichi Maekawa, Haiming Yu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
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Acceso en línea:https://doaj.org/article/3f0d3498d8f34d278a56988c3e76f4e0
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Sumario:Antiferromagnetic materials are potentially useful for spintronic applications. Here, the authors report high thermoelectric power value of 390 μV/K Seebeck coefficient in IrMn-based half magnetic tunnel junctions at room temperature.