Spin-orbit interaction and spintronics effects in semiconductor structures
A review of the recent results concerning the new concepts and achievements in the area of semiconductor spintronics (or spin-electronics) is presented. Because spin-orbit interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of electron spins and...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/3f1ef998416a46d79008c81ea4244bff |
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| Sumario: | A review of the recent results concerning the new concepts and achievements in the area
of semiconductor spintronics (or spin-electronics) is presented. Because spin-orbit
interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of
electron spins and electrical detection of spin dynamics they form the fundamental
mechanisms of new effects and the basis of different proposals for new spintronic devices. In
addition to known channels of SOI in semiconductor materials and heterostructures, new
terms of SOI, induced by interband interaction through the electrical polarization or atomic
displacement like optical phonons are proposed and analyzed in the paper. These SOI
7mechanisms have the physical nature in the relativistic quantum mechanics with Lorentz
boosts and this aspect is highlighted. Some particularities of the electronic states of
semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI
induced by the electrical polarization (EP) are studied. Size quantization states are shown to
transform into interface ones at some value of the in-plane QW wave vector under SOI effect.
Tunneling characteristics of single barrier heterostructure are analyzed in the conditions of
both types of SOIs and are established to be spin-dependent under SOI induced by the EP.
Several aspects dealing with the new discovered intrinsic spin and angular momentum Hall
effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron
system with the SOI of both intrinsic and EP induced types. New peculiarities of SHE and
AMHE , induced by interband interaction of heavy and light holes are studied in p-doped
semiconductors with band degeneracy in the framework of generalized Luttinger
Hamiltonian. Spin-conductivity induced by the EP is shown to proportional to difference of
the inverse values of the hole wave vectors. |
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