Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods

In this study, the B3LYP hybrid density functional theory was used to investigate the electromechanical characteristics of C<sub>70</sub> fullerene with and without point charges to model the effect of the surface of the gate electrode in a C<sub>70</sub> single-electron tran...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Jong Woan Choi, Changhoon Lee, Eiji Osawa, Ji Young Lee, Jung Chul Sur, Kee Hag Lee
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
Acceso en línea:https://doaj.org/article/3f283bf0fb994eb7a8065921f9b4da1d
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:3f283bf0fb994eb7a8065921f9b4da1d
record_format dspace
spelling oai:doaj.org-article:3f283bf0fb994eb7a8065921f9b4da1d2021-11-25T18:31:31ZElectromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods10.3390/nano111129952079-4991https://doaj.org/article/3f283bf0fb994eb7a8065921f9b4da1d2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2995https://doaj.org/toc/2079-4991In this study, the B3LYP hybrid density functional theory was used to investigate the electromechanical characteristics of C<sub>70</sub> fullerene with and without point charges to model the effect of the surface of the gate electrode in a C<sub>70</sub> single-electron transistor (SET). To understand electron tunneling through C<sub>70</sub> fullerene species in a single-C<sub>70</sub> transistor, descriptors of geometrical atomic structures and frontier molecular orbitals were analyzed. The findings regarding the node planes of the lowest unoccupied molecular orbitals (LUMOs) of C<sub>70</sub> and both the highest occupied molecular orbitals (HOMOs) and the LUMO of the C<sub>70</sub> anion suggest that electron tunneling of pristine C<sub>70</sub> prolate spheroidal fullerene could be better in the major axis orientation when facing the gate electrode than in the major (longer) axis orientation when facing the Au source and drain electrodes. In addition, we explored the effect on the geometrical atomic structure of C<sub>70</sub> by a single-electron addition, in which the maximum change for the distance between two carbon sites of C<sub>70</sub> is 0.02 Å.Jong Woan ChoiChanghoon LeeEiji OsawaJi Young LeeJung Chul SurKee Hag LeeMDPI AGarticlehybrid density functional theoryelectromechanical characteristicsC<sub>70</sub> fullerenepoint charges modelC<sub>70</sub> vertical flip isomers facing the gate electrode between the electrodesChemistryQD1-999ENNanomaterials, Vol 11, Iss 2995, p 2995 (2021)
institution DOAJ
collection DOAJ
language EN
topic hybrid density functional theory
electromechanical characteristics
C<sub>70</sub> fullerene
point charges model
C<sub>70</sub> vertical flip isomers facing the gate electrode between the electrodes
Chemistry
QD1-999
spellingShingle hybrid density functional theory
electromechanical characteristics
C<sub>70</sub> fullerene
point charges model
C<sub>70</sub> vertical flip isomers facing the gate electrode between the electrodes
Chemistry
QD1-999
Jong Woan Choi
Changhoon Lee
Eiji Osawa
Ji Young Lee
Jung Chul Sur
Kee Hag Lee
Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods
description In this study, the B3LYP hybrid density functional theory was used to investigate the electromechanical characteristics of C<sub>70</sub> fullerene with and without point charges to model the effect of the surface of the gate electrode in a C<sub>70</sub> single-electron transistor (SET). To understand electron tunneling through C<sub>70</sub> fullerene species in a single-C<sub>70</sub> transistor, descriptors of geometrical atomic structures and frontier molecular orbitals were analyzed. The findings regarding the node planes of the lowest unoccupied molecular orbitals (LUMOs) of C<sub>70</sub> and both the highest occupied molecular orbitals (HOMOs) and the LUMO of the C<sub>70</sub> anion suggest that electron tunneling of pristine C<sub>70</sub> prolate spheroidal fullerene could be better in the major axis orientation when facing the gate electrode than in the major (longer) axis orientation when facing the Au source and drain electrodes. In addition, we explored the effect on the geometrical atomic structure of C<sub>70</sub> by a single-electron addition, in which the maximum change for the distance between two carbon sites of C<sub>70</sub> is 0.02 Å.
format article
author Jong Woan Choi
Changhoon Lee
Eiji Osawa
Ji Young Lee
Jung Chul Sur
Kee Hag Lee
author_facet Jong Woan Choi
Changhoon Lee
Eiji Osawa
Ji Young Lee
Jung Chul Sur
Kee Hag Lee
author_sort Jong Woan Choi
title Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods
title_short Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods
title_full Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods
title_fullStr Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods
title_full_unstemmed Electromechanical Characteristics by a Vertical Flip of C<sub>70</sub> Fullerene Prolate Spheroid in a Single-Electron Transistor: Hybrid Density Functional Methods
title_sort electromechanical characteristics by a vertical flip of c<sub>70</sub> fullerene prolate spheroid in a single-electron transistor: hybrid density functional methods
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/3f283bf0fb994eb7a8065921f9b4da1d
work_keys_str_mv AT jongwoanchoi electromechanicalcharacteristicsbyaverticalflipofcsub70subfullereneprolatespheroidinasingleelectrontransistorhybriddensityfunctionalmethods
AT changhoonlee electromechanicalcharacteristicsbyaverticalflipofcsub70subfullereneprolatespheroidinasingleelectrontransistorhybriddensityfunctionalmethods
AT eijiosawa electromechanicalcharacteristicsbyaverticalflipofcsub70subfullereneprolatespheroidinasingleelectrontransistorhybriddensityfunctionalmethods
AT jiyounglee electromechanicalcharacteristicsbyaverticalflipofcsub70subfullereneprolatespheroidinasingleelectrontransistorhybriddensityfunctionalmethods
AT jungchulsur electromechanicalcharacteristicsbyaverticalflipofcsub70subfullereneprolatespheroidinasingleelectrontransistorhybriddensityfunctionalmethods
AT keehaglee electromechanicalcharacteristicsbyaverticalflipofcsub70subfullereneprolatespheroidinasingleelectrontransistorhybriddensityfunctionalmethods
_version_ 1718411009032454144