An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration

In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite str...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Aninamol Ani, P. Poornesh, Albin Antony, K. K. Nagaraja, Ashok Rao, Gopalkrishna Hegde, Evgeny Kolesnikov, Igor V. Shchetinin, Suresh D. Kulkarni, Vikash Chandra Petwal, Vijay Pal Verma, Jishnu Dwivedi
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
Acceso en línea:https://doaj.org/article/3f2d84ec5f4d448dabdfeb99c802e525
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite structure of IZO films is observed from XRD studies post electron beam irradiation, confirming structural stability, even in the intense radiation environment. The surface morphological studies by SEM confirms the granular structure with distinct and sharp grain boundaries for 5 kGy and 10 kGy irradiated films whereas the IZO film irradiated at 15 kGy shows the deterioration of defined grains. The presence of defects viz oxygen vacancies, interstitials are recorded from room temperature photoluminescence (RTPL) studies. The CO gas sensing estimations were executed at an optimized operating temperature of 300 °C for 1 ppm, 2 ppm, 3 ppm, 4 ppm, and 5 ppm. The 10 kGy treated IZO film displayed an enhanced sensor response of 2.61 towards low concentrations of 1 ppm and 4.35 towards 5 ppm. The enhancement in sensor response after irradiation is assigned to the growth in oxygen vacancies and well-defined grain boundaries since the former and latter act as vital adsorption locations for the CO gas.