An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration

In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite str...

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Autores principales:	Aninamol Ani, P. Poornesh, Albin Antony, K. K. Nagaraja, Ashok Rao, Gopalkrishna Hegde, Evgeny Kolesnikov, Igor V. Shchetinin, Suresh D. Kulkarni, Vikash Chandra Petwal, Vijay Pal Verma, Jishnu Dwivedi
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	indium-doped ZnO electron beam irradiation CO gas sensing Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/3f2d84ec5f4d448dabdfeb99c802e525
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spelling	oai:doaj.org-article:3f2d84ec5f4d448dabdfeb99c802e5252021-11-25T18:32:50ZAn 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration10.3390/nano111131512079-4991https://doaj.org/article/3f2d84ec5f4d448dabdfeb99c802e5252021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3151https://doaj.org/toc/2079-4991In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite structure of IZO films is observed from XRD studies post electron beam irradiation, confirming structural stability, even in the intense radiation environment. The surface morphological studies by SEM confirms the granular structure with distinct and sharp grain boundaries for 5 kGy and 10 kGy irradiated films whereas the IZO film irradiated at 15 kGy shows the deterioration of defined grains. The presence of defects viz oxygen vacancies, interstitials are recorded from room temperature photoluminescence (RTPL) studies. The CO gas sensing estimations were executed at an optimized operating temperature of 300 °C for 1 ppm, 2 ppm, 3 ppm, 4 ppm, and 5 ppm. The 10 kGy treated IZO film displayed an enhanced sensor response of 2.61 towards low concentrations of 1 ppm and 4.35 towards 5 ppm. The enhancement in sensor response after irradiation is assigned to the growth in oxygen vacancies and well-defined grain boundaries since the former and latter act as vital adsorption locations for the CO gas.Aninamol AniP. PoorneshAlbin AntonyK. K. NagarajaAshok RaoGopalkrishna HegdeEvgeny KolesnikovIgor V. ShchetininSuresh D. KulkarniVikash Chandra PetwalVijay Pal VermaJishnu DwivediMDPI AGarticleindium-doped ZnOelectron beam irradiationCO gas sensingChemistryQD1-999ENNanomaterials, Vol 11, Iss 3151, p 3151 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	indium-doped ZnO electron beam irradiation CO gas sensing Chemistry QD1-999
spellingShingle	indium-doped ZnO electron beam irradiation CO gas sensing Chemistry QD1-999 Aninamol Ani P. Poornesh Albin Antony K. K. Nagaraja Ashok Rao Gopalkrishna Hegde Evgeny Kolesnikov Igor V. Shchetinin Suresh D. Kulkarni Vikash Chandra Petwal Vijay Pal Verma Jishnu Dwivedi An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration
description	In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite structure of IZO films is observed from XRD studies post electron beam irradiation, confirming structural stability, even in the intense radiation environment. The surface morphological studies by SEM confirms the granular structure with distinct and sharp grain boundaries for 5 kGy and 10 kGy irradiated films whereas the IZO film irradiated at 15 kGy shows the deterioration of defined grains. The presence of defects viz oxygen vacancies, interstitials are recorded from room temperature photoluminescence (RTPL) studies. The CO gas sensing estimations were executed at an optimized operating temperature of 300 °C for 1 ppm, 2 ppm, 3 ppm, 4 ppm, and 5 ppm. The 10 kGy treated IZO film displayed an enhanced sensor response of 2.61 towards low concentrations of 1 ppm and 4.35 towards 5 ppm. The enhancement in sensor response after irradiation is assigned to the growth in oxygen vacancies and well-defined grain boundaries since the former and latter act as vital adsorption locations for the CO gas.
format	article
author	Aninamol Ani P. Poornesh Albin Antony K. K. Nagaraja Ashok Rao Gopalkrishna Hegde Evgeny Kolesnikov Igor V. Shchetinin Suresh D. Kulkarni Vikash Chandra Petwal Vijay Pal Verma Jishnu Dwivedi
author_facet	Aninamol Ani P. Poornesh Albin Antony K. K. Nagaraja Ashok Rao Gopalkrishna Hegde Evgeny Kolesnikov Igor V. Shchetinin Suresh D. Kulkarni Vikash Chandra Petwal Vijay Pal Verma Jishnu Dwivedi
author_sort	Aninamol Ani
title	An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration
title_short	An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration
title_full	An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration
title_fullStr	An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration
title_full_unstemmed	An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration
title_sort	8 mev electron beam modified in:zno thin films for co gas sensing towards low concentration
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/3f2d84ec5f4d448dabdfeb99c802e525
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An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration

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