Nano-granular indium sulfide layers for thin film solar cells
Nano-granular indium sulfide films were prepared by thermal evaporation onto quartz and glass substrates kept at TS = 220–240 °C during the deposition process. High transmittance of the nano-granular indium sulfide films in the visible region has been observed. Correlations between optical proper...
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| Main Authors: | , |
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| Format: | article |
| Language: | EN |
| Published: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Subjects: | |
| Online Access: | https://doaj.org/article/3f38b0ece05a4d4f90d0f8c787d5cda3 |
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| Summary: | Nano-granular indium sulfide films were prepared by thermal evaporation onto quartz
and glass substrates kept at TS = 220–240 °C during the deposition process. High transmittance of the nano-granular indium sulfide films in the visible region has been observed. Correlations between optical properties and morphology of film samples with various thickness
have been investigated. Modification of the form and shortwavelength shift of the band edge
occur simultaneously upon decreasing of the film thickness from 800 nm up to 30 nm, and the
involved mechanisms have been explained. The results indicate that the former effects are
assigned to multicomponent composition of the investigated films and that the obtained nanogranular thin films might be proposed as low-cost buffer materials for high-efficient thin-film solar cells with chalcopyrite absorber layers. |
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