Nano-granular indium sulfide layers for thin film solar cells

Nano-granular indium sulfide films were prepared by thermal evaporation onto quartz and glass substrates kept at TS = 220–240 °C during the deposition process. High transmittance of the nano-granular indium sulfide films in the visible region has been observed. Correlations between optical proper...

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Autores principales: Goncearova, O., Gremenok, V.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
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Acceso en línea:https://doaj.org/article/3f38b0ece05a4d4f90d0f8c787d5cda3
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spelling oai:doaj.org-article:3f38b0ece05a4d4f90d0f8c787d5cda32021-11-21T12:09:10ZNano-granular indium sulfide layers for thin film solar cells 2537-63651810-648Xhttps://doaj.org/article/3f38b0ece05a4d4f90d0f8c787d5cda32006-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3583https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365 Nano-granular indium sulfide films were prepared by thermal evaporation onto quartz and glass substrates kept at TS = 220–240 °C during the deposition process. High transmittance of the nano-granular indium sulfide films in the visible region has been observed. Correlations between optical properties and morphology of film samples with various thickness have been investigated. Modification of the form and shortwavelength shift of the band edge occur simultaneously upon decreasing of the film thickness from 800 nm up to 30 nm, and the involved mechanisms have been explained. The results indicate that the former effects are assigned to multicomponent composition of the investigated films and that the obtained nanogranular thin films might be proposed as low-cost buffer materials for high-efficient thin-film solar cells with chalcopyrite absorber layers. Goncearova, O.Gremenok, V.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 3-4, Pp 342-348 (2006)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Goncearova, O.
Gremenok, V.
Nano-granular indium sulfide layers for thin film solar cells
description Nano-granular indium sulfide films were prepared by thermal evaporation onto quartz and glass substrates kept at TS = 220–240 °C during the deposition process. High transmittance of the nano-granular indium sulfide films in the visible region has been observed. Correlations between optical properties and morphology of film samples with various thickness have been investigated. Modification of the form and shortwavelength shift of the band edge occur simultaneously upon decreasing of the film thickness from 800 nm up to 30 nm, and the involved mechanisms have been explained. The results indicate that the former effects are assigned to multicomponent composition of the investigated films and that the obtained nanogranular thin films might be proposed as low-cost buffer materials for high-efficient thin-film solar cells with chalcopyrite absorber layers.
format article
author Goncearova, O.
Gremenok, V.
author_facet Goncearova, O.
Gremenok, V.
author_sort Goncearova, O.
title Nano-granular indium sulfide layers for thin film solar cells
title_short Nano-granular indium sulfide layers for thin film solar cells
title_full Nano-granular indium sulfide layers for thin film solar cells
title_fullStr Nano-granular indium sulfide layers for thin film solar cells
title_full_unstemmed Nano-granular indium sulfide layers for thin film solar cells
title_sort nano-granular indium sulfide layers for thin film solar cells
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2006
url https://doaj.org/article/3f38b0ece05a4d4f90d0f8c787d5cda3
work_keys_str_mv AT goncearovao nanogranularindiumsulfidelayersforthinfilmsolarcells
AT gremenokv nanogranularindiumsulfidelayersforthinfilmsolarcells
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