Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

Abstract The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based fi...

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Autores principales:	Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Elad Koren
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/3f41e59fe65e4d389b599a8af0b08bd9
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spelling	oai:doaj.org-article:3f41e59fe65e4d389b599a8af0b08bd92021-12-02T18:14:24ZCross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se310.1038/s41699-021-00261-w2397-7132https://doaj.org/article/3f41e59fe65e4d389b599a8af0b08bd92021-09-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00261-whttps://doaj.org/toc/2397-7132Abstract The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.Debopriya DuttaSubhrajit MukherjeeMichael UzhanskyElad KorenNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Debopriya Dutta Subhrajit Mukherjee Michael Uzhansky Elad Koren Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
description	Abstract The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.
format	article
author	Debopriya Dutta Subhrajit Mukherjee Michael Uzhansky Elad Koren
author_facet	Debopriya Dutta Subhrajit Mukherjee Michael Uzhansky Elad Koren
author_sort	Debopriya Dutta
title	Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
title_short	Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
title_full	Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
title_fullStr	Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
title_full_unstemmed	Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3
title_sort	cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2d in2se3
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/3f41e59fe65e4d389b599a8af0b08bd9
work_keys_str_mv	AT debopriyadutta crossfieldoptoelectronicmodulationviaintercoupledferroelectricityin2din2se3 AT subhrajitmukherjee crossfieldoptoelectronicmodulationviaintercoupledferroelectricityin2din2se3 AT michaeluzhansky crossfieldoptoelectronicmodulationviaintercoupledferroelectricityin2din2se3 AT eladkoren crossfieldoptoelectronicmodulationviaintercoupledferroelectricityin2din2se3
_version_	1718378388520960000

Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

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