Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free
Abstract Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This p...
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Nature Portfolio
2021
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oai:doaj.org-article:3fb08806d82440e48508ac56b10314b32021-12-02T17:41:17ZSuper fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free10.1038/s41598-021-97122-92045-2322https://doaj.org/article/3fb08806d82440e48508ac56b10314b32021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97122-9https://doaj.org/toc/2045-2322Abstract Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical–mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH)4 abrasives at a pH of 4.0–5.0 and a mixture of CeO2 and Ce(OH)4 abrasives at a pH of 5.5–6.5. The Ce(OH)4 abrasives demonstrate better abrasive stability in the SiO2-film CMP slurry than the CeO2 abrasives and produce a minimum abrasive zeta potential (~ 12 mV) and a minimum secondary abrasive size (~ 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of ~ 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO2-film polishing rate (~ 524 nm/min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches.Young-Hye SonGi-Ppeum JeongPil-Su KimMan-Hyup HanSeong-Wan HongJae-Young BaeSung-In KimJin-Hyung ParkJea-Gun ParkNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021) |
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Medicine R Science Q Young-Hye Son Gi-Ppeum Jeong Pil-Su Kim Man-Hyup Han Seong-Wan Hong Jae-Young Bae Sung-In Kim Jin-Hyung Park Jea-Gun Park Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free |
| description |
Abstract Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical–mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH)4 abrasives at a pH of 4.0–5.0 and a mixture of CeO2 and Ce(OH)4 abrasives at a pH of 5.5–6.5. The Ce(OH)4 abrasives demonstrate better abrasive stability in the SiO2-film CMP slurry than the CeO2 abrasives and produce a minimum abrasive zeta potential (~ 12 mV) and a minimum secondary abrasive size (~ 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of ~ 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO2-film polishing rate (~ 524 nm/min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches. |
| format |
article |
| author |
Young-Hye Son Gi-Ppeum Jeong Pil-Su Kim Man-Hyup Han Seong-Wan Hong Jae-Young Bae Sung-In Kim Jin-Hyung Park Jea-Gun Park |
| author_facet |
Young-Hye Son Gi-Ppeum Jeong Pil-Su Kim Man-Hyup Han Seong-Wan Hong Jae-Young Bae Sung-In Kim Jin-Hyung Park Jea-Gun Park |
| author_sort |
Young-Hye Son |
| title |
Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free |
| title_short |
Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free |
| title_full |
Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free |
| title_fullStr |
Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free |
| title_full_unstemmed |
Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free |
| title_sort |
super fine cerium hydroxide abrasives for sio2 film chemical mechanical planarization performing scratch free |
| publisher |
Nature Portfolio |
| publishDate |
2021 |
| url |
https://doaj.org/article/3fb08806d82440e48508ac56b10314b3 |
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