Electrically-triggered micro-explosion in a graphene/SiO2/Si structure

Abstract Electrically-triggered micro-explosions in a metal-insulator-semiconductor (MIS) structure can fragment/atomize analytes placed on it, offering an interesting application potential for chip-scale implementation of atomic emission spectroscopy (AES). We have investigated the mechanisms of mi...

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Autores principales: Siyang Liu, Myungji Kim, Hong Koo Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/3ffaee1b8bac4f889d3730f384b8dde7
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spelling oai:doaj.org-article:3ffaee1b8bac4f889d3730f384b8dde72021-12-02T16:08:01ZElectrically-triggered micro-explosion in a graphene/SiO2/Si structure10.1038/s41598-018-25776-z2045-2322https://doaj.org/article/3ffaee1b8bac4f889d3730f384b8dde72018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25776-zhttps://doaj.org/toc/2045-2322Abstract Electrically-triggered micro-explosions in a metal-insulator-semiconductor (MIS) structure can fragment/atomize analytes placed on it, offering an interesting application potential for chip-scale implementation of atomic emission spectroscopy (AES). We have investigated the mechanisms of micro-explosions occurring in a graphene/SiO2/Si (GOS) structure under a high-field pulsed voltage drive. Micro-explosions are found to occur more readily in inversion bias than in accumulation bias. Explosion damages in inversion-biased GOS differ significantly between n-Si and p-Si substrate cases: a highly localized, circular, protruding cone-shape melt of Si for the n-Si GOS case, whereas shallow, irregular, laterally-propagating trenches in SiO2/Si for the p-Si GOS case. These differing damage morphologies are explained by different carrier-multiplication processes: in the n-Si case, impact ionization propagates from SiO2 to Si, causing highly-localized melt explosions of Si in the depletion region, whereas in the p-Si case, from SiO2 towards graphene electrode, resulting in laterally wide-spread micro-explosions. These findings are expected to help optimize the GOS-based atomizer structure for low voltage, small-volume analyte, high sensitivity chip-scale emission spectroscopy.Siyang LiuMyungji KimHong Koo KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-11 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Siyang Liu
Myungji Kim
Hong Koo Kim
Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
description Abstract Electrically-triggered micro-explosions in a metal-insulator-semiconductor (MIS) structure can fragment/atomize analytes placed on it, offering an interesting application potential for chip-scale implementation of atomic emission spectroscopy (AES). We have investigated the mechanisms of micro-explosions occurring in a graphene/SiO2/Si (GOS) structure under a high-field pulsed voltage drive. Micro-explosions are found to occur more readily in inversion bias than in accumulation bias. Explosion damages in inversion-biased GOS differ significantly between n-Si and p-Si substrate cases: a highly localized, circular, protruding cone-shape melt of Si for the n-Si GOS case, whereas shallow, irregular, laterally-propagating trenches in SiO2/Si for the p-Si GOS case. These differing damage morphologies are explained by different carrier-multiplication processes: in the n-Si case, impact ionization propagates from SiO2 to Si, causing highly-localized melt explosions of Si in the depletion region, whereas in the p-Si case, from SiO2 towards graphene electrode, resulting in laterally wide-spread micro-explosions. These findings are expected to help optimize the GOS-based atomizer structure for low voltage, small-volume analyte, high sensitivity chip-scale emission spectroscopy.
format article
author Siyang Liu
Myungji Kim
Hong Koo Kim
author_facet Siyang Liu
Myungji Kim
Hong Koo Kim
author_sort Siyang Liu
title Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
title_short Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
title_full Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
title_fullStr Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
title_full_unstemmed Electrically-triggered micro-explosion in a graphene/SiO2/Si structure
title_sort electrically-triggered micro-explosion in a graphene/sio2/si structure
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/3ffaee1b8bac4f889d3730f384b8dde7
work_keys_str_mv AT siyangliu electricallytriggeredmicroexplosioninagraphenesio2sistructure
AT myungjikim electricallytriggeredmicroexplosioninagraphenesio2sistructure
AT hongkookim electricallytriggeredmicroexplosioninagraphenesio2sistructure
_version_ 1718384650267656192